A New Thyristor-Based Power Electronic Device for DC Circuit Breakers in Medium-Voltage Applications

Qawasmi, Ala; Teichrib, Jakob; Venkatesh, N.; Doncker, Rik W. De

doi:10.1109/pedg.2018.8447700

Cited by 5 publications

(3 citation statements)

References 3 publications

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“…The diode-assisted gate commutated thyristor (DAGCT) concept was proposed by Dr. Rik W. De Doncker [23] [24], which is similar to the IGCT, by replacing the pre-charged capacitor bank in the IGCT with multiple diodes connected in series forming a diode-stack in the GCT cathode terminal, as shown in Fig. 22 (a).…”

Section: Dagct Based Sscbsmentioning

confidence: 99%

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A Review of Thyristor Based DC Solid-State Circuit Breakers

Song¹,

Cairoli²,

Du³

et al. 2021

IEEE Open J. Power Electron.

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Characterized by ultra-fast and arc-free fault clearing, solid state circuit breakers (SSCBs) are getting increasing popularity with the latest development of advanced power semiconductor devices, like the silicon carbide (SiC) MOSFETs. On the other hand, the mature and cost-effective thyristor technology exhibits the beneficial features of low conduction losses, high surge current capability, bidirectional voltage blocking capability, etc., making it a very attractive candidate for SSCB development. However, the conventional thyristors (silicon controlled rectifiers) have no current turn-off capability and need some auxiliary circuits (e.g. LC resonant circuit) or special topology (e.g. Z-source breakers) to be applied in SSCBs. Meanwhile, some active turn-off thyristors (like integrated gate-commutated thyristors, emitter turn-off thyristors, etc.) are specially modified to have current turn off capability, and better suitable for SSCBs. This paper reviews and studies the SSCBs based on the conventional or active turn-off thyristors. The design challenges and performance comparison of SSCBs with different thyristor technologies are also discussed.

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Section: Dagct Based Sscbsmentioning

confidence: 99%

“…are invented and called active turn-off thyristors. The active turn-off thyristor based SSCBs have been investigated extensively in the past decade [1][18]- [24] and the paper reviews the technology status in the SSCB application and summarizes the advantages and disadvantages with these technologies.…”

Section: Introductionmentioning

confidence: 99%

A Review of Thyristor Based DC Solid-State Circuit Breakers

Song¹,

Cairoli²,

Du³

et al. 2021

IEEE Open J. Power Electron.

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“…Author is with the multiple individual IGBT chips arranged in parallel, has been developed to overcome the shortcomings associated to the conventional packaging technology. The PPI packaging technology is based on the packaging of monolithic devices that contain a single wafer, such as diodes, thyristors, and gate turnoff thyristors [4]. In contrast to the conventional power modules, where soldered bond wires are used for the electrical connections, press-pack devices achieve electrical and thermal contact by applying pressure, which is typically from 10 to 20 N/mm 2 [5].…”

Section: Introductionmentioning

confidence: 99%

Thermal Management System for Press-Pack IGBT Based on Liquid Metal Coolant

Yerasimou

Pickert

Dai

et al. 2020

IEEE Trans. Compon., Packag. Manufact. Technol.

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The press-pack packaging technology has been adopted in recent years for insulated-gate bipolar transistors (IGBTs) to be utilized in high voltage -high current applications, such as high-voltage direct current (HVDC) electric power transmission. Traditionally, the heat management of such systems is based on water coolant, however, there are numerous challenges associated with that method, such as the requirement to deionize the water to prevent electrical potentials and inherent problems of corrosion and leakage in the cooling piping structure. This paper presents the design and development of a liquid metal heat sink for press-pack IGBTs. The use of a thermal management system based on liquid metal increases the heat dissipation capability without corroding the cooling structure. Analytical work is performed on the design of the heat sink. Moreover, the thermal performance of the heat sink is experimentally validated against a commercial water-based cooling system. The presented results show that the cooling performance of the liquid metal system is increased, whereas the shortcomings of the water-based system are eliminated. Index Terms-Press-pack insulated-gate bipolar transistor (IGBT) power module cooling, junction temperature, liquid metal cooling, magnetohydrodynamic (MHD) pump, high-voltage direct current (HVDC) cooling.

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