A new transit-time device using quantum-well injection

Kesan, V. P.; Neikirk, Dean P.; Streetman, B. G.

doi:10.1109/edl.1987.26576

Cited by 36 publications

(10 citation statements)

References 12 publications

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“…An example is the Quantum Well Injection Transit Time device QWITT. The tunneling structure is used to inject current pulses into a transit time device similar to an IMPATT [37]. By using tunneling instead of an avalanche process for injection, there is some loss of efficiency, but there is a compensating reduction in noise.…”

Section: Resonant Tunneling Diodementioning

confidence: 99%

Reconstruction of the (001) Surface of Si from Molecular Dynamics

Holender¹,

Jędrzejek²

1991

Acta Phys. Pol. A

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The device applications of gallium arsenide and related Ill-V compound and alloy semiconductors are reviewed. A range of electronic devices is described, and the current state of the art performance is indicated for each type of device. The devices which will be described are: transferred electron devices -as oscillators up to 200 GHz, GaAs MESFETs -the workhorse microwave solid state device, some monolithic microwave integrated circuit /MMIC/, and heterojunction devices. The use of molecular beam epitaxy MBE to grow I l l -V s e m i c o n d u c t o r s w i t h g r e a t c o n t r o l o v e r t h e d o p i n g , m o l e f r a c t i o n o f t h e constituents and the thickness of the epilayer has permitted the construction of devices with atomically abrupt interfaces between regions of different doping and alloy. The electronic devices which make use of such abrupt heter o -j u n c t i o n s i n c l u d e : h i g h e l e c t r o n m o b i l i t y t r a n s i s t o r s , h e t e r o j u n c t i o n b i p o l a r transistor, and laser diodes. A number of novel devices based on multiple barrier and quantum well structures is also described, including Resonant Tunneling Devices.

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Section: Resonant Tunneling Diodementioning

confidence: 99%

Reconstruction of the (001) Surface of Si from Molecular Dynamics

Holender¹,

Jędrzejek²

1991

Acta Phys. Pol. A

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“…Now the J = 0 situation leads to eigenvalue problems, and bound states can be found. When J , 0, equation 15is nonlinear, and we are no longer dealing with an eigenvalue problem; but as in the case of a regional approximations solutions can be obtained for well defined values of 'k' and 'K', (see equations (17) and (19)).…”

Section: Transport In Quantum Based Devicesmentioning

confidence: 99%

Numerical Modeling of Two-Terminal Quantum Well Devices

Grubin¹,

Kreskovsky²,

Cahay³

1989

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“…1. The various modes of device operation are strongly dependent upon the dc bias across the quantum well [3]. For a dc bias point below the quantum well resonance peak, maximum current injection should occur at an angle of 7c/2 in the rf cycle.…”

Section: Analvsismentioning

confidence: 99%

“…For a dc bias point below the quantum well resonance peak, maximum current injection should occur at an angle of 7c/2 in the rf cycle. Similarly, for a bias point just above resonance, maximum injection should occur at 37c/2 [3]. Thus, depending on the bias point chosen, the drift region length should be designed to provide a drift angle of approximately 3x/2 or x/2, respectively.…”

Section: Analvsismentioning

confidence: 99%

“…However, the output power demonstrated by pure quantum well oscillators has been very low [2]. We have recently proposed an optimized quantum well structure which exploits transit time phenomena by using asymmetric spacer layers [3]. A thin (-5OA) spacer layer is introduced before the quantum well to prevent dopant migration and a thicker, unintentionally doped, layer is used after the quantum well to form the drift region for transit time operation (Fig.…”

Section: Introductionmentioning

confidence: 99%

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Power-optimized design of quantum well oscillators

Kesan

Linton

Miller

et al. 1987

1987 International Electron Devices Meeting

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The use of quantum well devices for extremely high frequency oscillators has recently been proposed. Results up to 200 GHz have been reported. although the output powers have been extremely small. We present analyses of a new quantum well oscillator device, the quantum well injection transit time (QWITT) diode, which exploits transit time effects to improve rf performance of quantum well oscillators. The small and large signal analyses indicate that a QWrrr diode may provide reasonable power levels at frequencies above 100 GHz.

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A new transit-time device using quantum-well injection

Cited by 36 publications

References 12 publications

Reconstruction of the (001) Surface of Si from Molecular Dynamics

Reconstruction of the (001) Surface of Si from Molecular Dynamics

Numerical Modeling of Two-Terminal Quantum Well Devices

Power-optimized design of quantum well oscillators

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