A New Two-Dimensional Electron Gas Field-Effect Transistor Fabricated on Undoped AlGaAs–GaAs Heterostructure

Abstract

A new two-dimensional electron gas (2DEG) field-effect transistor (FET) which operates in an MOS transistor-like mode is fabricated on undoped AlGaAs–GaAs heterostructures grown by both molecular beam epitaxy and organometallic vapour phase epitaxy. This device with very simple structure is expected to have performance comparable to those of selectively doped heterostructure FETs and can easily be integrated.

Anodic oxidation of AlGaAs and detection of the AlGaAs-GaAs heterojunction interface

“…(Malibu, CA) and consisted of n-type (10 18 /cm 3 ) AIGaAs (100 nm thick) on n-type (10 17 /cm 3 ) A!GaAs (1000 um thick) epilayers on semi-insulating GaAs substrates and n-type (10 17 /cm) ) AIGaAs (100 nm) on n-type (10 17 /em"' ) GaAs (1000 nm thick) epilayers on semi-insulating GaAs. (Malibu, CA) and consisted of n-type (10 18 /cm 3 ) AIGaAs (100 nm thick) on n-type (10 17 /cm 3 ) A!GaAs (1000 um thick) epilayers on semi-insulating GaAs substrates and n-type (10 17 /cm) ) AIGaAs (100 nm) on n-type (10 17 /em"' ) GaAs (1000 nm thick) epilayers on semi-insulating GaAs.…”

“…(2) 3.oL w here IV is the order of refraction, d the oxide thickness, () is the incident angle, and;t. is the wavelength. The data shown in Fig.…”

A high threshold voltage uniformity MIS-like heterostructure FET using n+-Ge as a gate electrode

“…Within the past year, MIS-like heterostructure FET's, which are characterized by the use of an undoped A1,Gal -,As layer as opposed to the n --doped A1,Gal -,As layer of HEMT's, have become the object of intensive research [5]-[$I. The advantages of these FET's are that high VTH uniformity over a large sample area and VTH reproducibility can be obtained.…”

“…Several materials have been proposed for the gate electrode of MIS-like heterostructure FET: TiiPtiAu [5], n + -GaAs [6], [7], and WSi, [$I. However, the threshold voltages of these FET's are too high ( -0.8 V) [8] or too low (0.0 V) [6], [7] for fabricating LSI.…”