Anodic oxidation of AlGaAs and detection of the AlGaAs-GaAs heterojunction interface

Abstract

Effects of interface donors on far infrared photoresponse at cyclotron resonance in a (AlGa)As/GaAs heterojunction J.

Growth and characterization of thin anodic oxide films on n-InSb(100) formed in aqueous solutions

“…Because of their direct band gap, semiconductors such as GaAs, InP and InSb are used for instance for light-emitting diodes, lasers and detectors [1][2][3]. Due to its narrow band gap (0.17 eV at room temperature), InSb is an important representative of this semiconductor group with wide applications in IR emission and detection [4,5] and in metal oxide semiconductor field effect transistors (MOSFETs) devices [6].…”

Composition and growth of thin anodic oxides formed on InP (100)

“…4b) is consistent with the In 3d 5/2 data. Peaks corresponding to InPO 4 and In(PO 3 ) 3 and In(PO y ) x and/or P 2 O 5 species are clearly identified. The relative yields indicate a large dominance of InPO 4 and In(PO 3 ) 3 over other phosphorus-containing species.…”

“…Curve-fitting of the In 3d 5/2 signal (Fig. 4a) reveals that the inner layer is composed of In(PO y ) x , InPO 4 and/or In(PO 3 ) 3 and In 2 O 3 . As the peak related to InPO 4 and In(PO 3 ) 3 occurs at a similar energy it is not possible to specify if one or both species are present in the film.…”

“…4. Various species are probably present in the phosphorus-rich layer including oxides like In 2 O 3 and P 2 O 5 and phos- phate and polyphosphate compounds InPO 4 , In(PO 3 ) 3 and In(PO y ) x [21] with x approximately equal to 3 and y in the range 3 Á/5 [22]. Curve-fitting was performed using the binding energies of Hollinger et al [4,23] and Faur et al [24].…”

Al0.2Ga0.8As/In0.15Ga0.85As MOSPHEMT with low temperature LPD-deposited Al2O3 as gate dielectric

“…In past decades, attempts have been made to use both GaAs native oxides and deposited insulating layers as gate dielectrics. Several methods have been applied to grow a gate oxide on AlGaAs or GaAs such as wet thermal oxidation [4][5][6][7], anodic [8,9], plasma [10], photoelectrochemical oxidation [11], liquid phase oxidization [12,13] molecular beam epitaxy [14], metal organic chemical vapor deposition, direct current reactive magnetron sputtering, and atomic layer deposition (ALD) processes [15,16]. The thin alumina (Al 2 O 3 ) films of the nanometer scale have been seen widely as potential material for the replacement of SiO 2 in future-generation CMOS devices due to its large band gap (9 eV), high dielectric constant (k $ 10), high breakdown field (10 7 V/cm), and thermal stability (amorphous up to at least 1000°C).…”