A new type of GaN HEMT based high power high-pass/low-pass phase shifter at X band

Hettak, K.; Ross, Tyler; Gratton, Daniel; Wight, J.S.

doi:10.1109/mwsym.2012.6259738

Cited by 10 publications

(5 citation statements)

References 2 publications

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“…They achieved an RMS phase error of <5.36° without any phase calibration technique. Meanwhile, it is also interesting to note that a much simpler 1-bit GaN phase shifter in the X band reported in [ 11 , 12 ] also exhibited the phase errors of 3–5°.…”

Section: Introductionmentioning

confidence: 99%

A 28 GHz GaN 6-Bit Phase Shifter MMIC with Continuous Tuning Calibration Technique

Seo,

Lee,

Lee

et al. 2024

Sensors

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A 28 GHz digitally controlled 6-bit phase shifter with a precision calibration technique in GaN high-electron mobility transistor (HEMT) technology is presented for Ka-band phased-array systems and applications. It comprises six stages, in which stages 1 and 2 for 5.625° and 11.25° are designed in the form of a switched-line circuit, and stages 3, 4, and 5 for 22.5°, 45°, and 90° are designed in the form of a switched-filter circuit. The final stage 6 for 180° is designed in a single-to-differential balun followed by a single-pole double-throw (SPDT) switch for achieving an efficient phase inversion. A novel continuous tuning calibration technique is proposed to improve the phase accuracy. It controls the gate bias voltage of off-state HEMTs at the stage 6 SPDT switch for fine calibration of the output phase. Fabricated in a 0.15 μm GaN HEMT process using a die size of 1.75 mm2, the circuit produces 64 phase states at 28 GHz with a 5.625° step. The experimental results show that the Root-Mean-Square (RMS) phase error is significantly improved from 8.56° before calibration to 1.08° after calibration. It is also found that the calibration does not induce significant changes for other performances such as the insertion loss, RMS amplitude error, and input-referred P1dB. This work successfully demonstrates that the GaN technology can be applied to millimeter-wave high-power phased-array transceiver systems.

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Section: Introductionmentioning

confidence: 99%

A 28 GHz GaN 6-Bit Phase Shifter MMIC with Continuous Tuning Calibration Technique

Seo,

Lee,

Lee

et al. 2024

Sensors

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“…High power amplifiers have been demonstrated with good performance at microwave and millimeter-wave frequencies such as an output power of more than 1.7 W [1] and 3 W [2] at W-band. One-bit 45 • phase shifters based on this technology have also been investigated at X-band using HEMTs permitting to switch between two states [3].…”

Section: Introductionmentioning

confidence: 99%

A GaN Schottky Diode-based analog phase shifter MMIC

Jia¹,

Okada²,

Faucher³

et al. 2014

2014 9th European Microwave Integrated Circuit Conference

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A GaN Schottky Diode-based Analog Phase Shifter MMIC of T-topology has been designed for 35 GHz operation. An all E-Beam technology was employed for MMIC realization. The measured, as well modeled small and large-signal diode characteristics were used for evaluating the phase-shifter performance in view of its potential for robust power operation. The phase shifter presents analog phase shifting capability up to 45 • with ∼ 7 dB insertion loss and a maximum VSWR of 2:1 in the 32 to 38 GHz range. Good power handling capability and robust performance is demonstrated through large signal analysis and experimental characterization.

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“…A variety of high-pass-low-pass phase shifters have been reported in different technologies [64]- [66]. They are typically designed as integrated circuits.…”

Section: High-pass-low-pass Phase Shiftermentioning

confidence: 99%

Gallium Nitride Phase Shifters

Ross¹

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This thesis presents two different types of high-power gallium nitride (GaN) phase shifters designed for X-band (8-12 GHz) but offering good performance over a much wider band. The first type of phase shifter is a novel design having 22.5°phase shift, which promises wide bandwidth (in this case limited by the SPDT switch also designed), but achieves decent insertion loss (5 dB), good return loss (better than 11 dB) and very low phase variation (1°) across X-band. The components for a 45°differential phase shift using the same structure were also fabricated and verified with measurements. The second type of phase shifter is a 22.5°switched-filter phase shifter which has much wider bandwidth than is typically found with this configuration, while maintaining low insertion loss (<2 dB), good return loss (>11.15 dB) and an amplitude imbalance of less than 1.03 dB across X-band. The 1 dB compression point was higher than the laboratory equipment was able to measure (>38 dBm) and the phase shifter monolithic microwave integrated circuit (MMIC) exhibited an input-referred thirdii ABSTRACT iii order intercept point (IIP 3 ) higher than 46 dBm. A K-band phase shifter was also designed to test the limits of the technology. The high-power phase shifters have been fabricated in a 0.5 µm GaN HEMT process and were designed using an accurate, customized switch HEMT model. Suspended inductors offering improved quality factor and increased self-resonance frequency were also used in the design of some of the phase shifters.

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A new type of GaN HEMT based high power high-pass/low-pass phase shifter at X band

Cited by 10 publications

References 2 publications

A 28 GHz GaN 6-Bit Phase Shifter MMIC with Continuous Tuning Calibration Technique

A 28 GHz GaN 6-Bit Phase Shifter MMIC with Continuous Tuning Calibration Technique

A GaN Schottky Diode-based analog phase shifter MMIC

Gallium Nitride Phase Shifters

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