A new VDD- and GND-floating rails SRAM with improved read SNM and without multi-level voltage regulator

Pasandi, Ghasem; Fakhraie, S.M.

doi:10.1109/iraniancee.2014.6999568

Cited by 2 publications

(1 citation statement)

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“…Due to the difficulty of finding information related to the layout used in actual commercial SRAM design, we decided to use Figure 5b as a reference for our study. The layout rules adopted were obtained from the literature [27,[29][30][31]. Furthermore, to complete the needed input data, it was necessary to determine the doping values for N+/P+ regions and the N/P wells since the doping profile significantly impacts the SEE impact.…”

Section: Layout-level Parametersmentioning

confidence: 99%

Evaluation of a Simplified Modeling Approach for SEE Cross-Section Prediction: A Case Study of SEU on 6T SRAM Cells

Marques,

Wrobel,

Aguiar

et al. 2024

Electronics

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Electrical models play a crucial role in assessing the radiation sensitivity of devices. However, since they are usually not provided for end users, it is essential to have alternative modeling approaches to optimize circuit design before irradiation tests, and to support the understanding of post-irradiation data. This work proposes a novel simplified methodology to evaluate the single-event effects (SEEs) cross-section. To validate the proposed approach, we consider the 6T SRAM cell a case study in four technological nodes. The modeling considers layout features and the doping profile, presenting ways to estimate unknown parameters. The accuracy and limitations are determined by comparing our simulations with actual experimental data. The results demonstrated a strong correlation with irradiation data, without requiring any fitting of the simulation results or access to process design kit (PDK) data. This proves that our approach is a reliable method for calculating the single-event upset (SEU) cross-section for heavy-ion irradiation.

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Section: Layout-level Parametersmentioning

confidence: 99%