A non-volatile memory cell based on ferroelectric storage capacitors

Kinney, W.I.; Shepherd, W.H.; Miller, Warner A.; Evans, J. T.; Womack, R.H.

doi:10.1109/iedm.1987.191567

Cited by 15 publications

(5 citation statements)

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“…Further, the deposition technique of ferroelectric thin films has been demonstrated to be compatible with CMOS (Complementary Metal Oxide Semiconductor) integrated circuit processes [13]. cell [14]. The operation of this example is based on the hysteresis characteristic illustrated in Fig.…”

Section: Dennition Of Ferroelectricity and The Hysteresis Characterismentioning

confidence: 99%

“…By using the extracted a(£) in Eqs. (14) and (15), the measured CV characteristic can then be reproduced.…”

Section: E = Dp = A\t-tc)p + L3p^ + Yp' +•mentioning

confidence: 99%

“…20, the capacitance can be expressed based on Eqs. (14) and 15 will be made for the spatially varying field model: each film layer has a uniform electric field and has a domain strucmre that behaves according to the P versus E relation shown in Fig. 21.…”

Section: E = Dp = A\t-tc)p + L3p^ + Yp' +•mentioning

confidence: 99%

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Domain switching and spatial dependence of permittivity in ferroelectric thin films

Chai

Brews

Schrimpf

et al. 1997

Journal of Applied Physics

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I. Background 10 §1.1 Definition of ferroelectricity and the hysteresis characteristic 10 §1.11 Ferroelectric capacitance-voltage (CV) characteristic §I.in The physical origin of ferroelectricity §I.IV Nonvolatile memory application of ferroelectric thin films §I.V Representative types of ferroelectric materials §1. VI Motivation and goal §I.Vn Scope of this work II. Experimental §11.1 Sample preparation §n.n Measured hysteresis characteristics §n.in Measured CV characteristics 27 III. Theory and review 29 §in.I Thermodynamic phenomenological treatment of modeling phase transition 29 §in.n Thermodynamic phenomenological treatment of modeling behavior in ferroelectric phase 30 §in.in Review of relevant work 33 7 TABLE OF CONTENTS-Continued IV. A multiple-domain model for ferroelectric films with uniform Electric fields 40 §rV.I Introduction 40 §IV.n A multiple-domain model for ferroelectric films with uniform electric fields 41 §IV.III Application of the multiple-domain model to PZT capacitors with various niobium doping levels 45 §rV.IV Application of the multiple-domain model to the Y-1 capacitor 46 V. A spatially varying domain structure for ferroelectric films subject to nonuniform electric field 65 §VI.III.B Doping profiling in partially-depleted ferroelectric films §VI.in.C Multiple doping profiling in fiiUy-depleted ferroelectric films77 § VI.IV Computer simulations § VI.V Results and discussion Vn. Comparison of the uniform and the nonuniform field models §Vn.I Introduction §vn.n Comparison of the uniform and the nonuniform field models

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Section: Dennition Of Ferroelectricity and The Hysteresis Characterismentioning

confidence: 99%

“…By using the extracted a(£) in Eqs. (14) and (15), the measured CV characteristic can then be reproduced.…”

Section: E = Dp = A\t-tc)p + L3p^ + Yp' +•mentioning

confidence: 99%

See 1 more Smart Citation

Domain switching and spatial dependence of permittivity in ferroelectric thin films

Chai

Brews

Schrimpf

et al. 1997

Journal of Applied Physics

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“…An access device (typically FET) is also needed to prevent cross-talk during programming and reading, configured either as a series element with the capacitor (1T-1C cell) [55,89] (Figure 1.5 B) or as a string of FETs and capacitors connected in parallel, with the BL , which can be used to encode binary data. An access device (typically FET) is also needed to prevent cross-talk during programming and reading, configured either as a series element with the capacitor (1T-1C cell) [55,89] (Figure 1.5 B) or as a string of FETs and capacitors connected in parallel, with the BL , which can be used to encode binary data.…”

Section: Ferro-electric Rammentioning

confidence: 99%

Phase Change Memory: From Devices to Systems

Qureshi

Gurumurthi

Rajendran³

2011

Synthesis Lectures on Computer Architecture

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“…Finally, nano-second speed of domain switching implies that they are applicable to a high-speed memory device. Since ferroelectric capacitors was explored for use in memory applications by Kinney et al (Kinney et al, 1987); Evans and Womack (Evans & Womack, 1988); and Eaton et al (Eaton et al, 1988), it has been attempted to epitomize ferroelectrics to applicable memory solutions in many aspects. In the beginning of 1990's, silicon institutes have begun to exploit ferroelectrics as an application for high-density DRAMs (Moazzami et al, 1992;Ohno et al, 1994).…”

Section: Introductionmentioning

confidence: 99%