Domain switching and spatial dependence of permittivity in ferroelectric thin films

Abstract

I. Background 10 §1.1 Definition of ferroelectricity and the hysteresis characteristic 10 §1.11 Ferroelectric capacitance-voltage (CV) characteristic §I.in The physical origin of ferroelectricity §I.IV Nonvolatile memory application of ferroelectric thin films §I.V Representative types of ferroelectric materials §1. VI Motivation and goal §I.Vn Scope of this work II. Experimental §11.1 Sample preparation §n.n Measured hysteresis characteristics §n.in Measured CV characteristics 27 III. Theory and review 29 §in.I Thermodynamic phenomenological treatment of modeling phase transition 29 §in.n Thermodynamic phenomenological treatment of modeling behavior in ferroelectric phase 30 §in.in Review of relevant work 33 7 TABLE OF CONTENTS-Continued IV. A multiple-domain model for ferroelectric films with uniform Electric fields 40 §rV.I Introduction 40 §IV.n A multiple-domain model for ferroelectric films with uniform electric fields 41 §IV.III Application of the multiple-domain model to PZT capacitors with various niobium doping levels 45 §rV.IV Application of the multiple-domain model to the Y-1 capacitor 46 V. A spatially varying domain structure for ferroelectric films subject to nonuniform electric field 65 §VI.III.B Doping profiling in partially-depleted ferroelectric films §VI.in.C Multiple doping profiling in fiiUy-depleted ferroelectric films77 § VI.IV Computer simulations § VI.V Results and discussion Vn. Comparison of the uniform and the nonuniform field models §Vn.I Introduction §vn.n Comparison of the uniform and the nonuniform field models

Epitaxial 0.65PbMg1/3Nb2/3O3–0.35PbTiO3 (PMN–PT) thin films grown on LaNiO3/CeO2/YSZ buffered Si substrates

“…Further, ε r -E characteristics were found to be asymmetric in nature owing to the different top and bottom electrodes. The various reasons -the presence of different chemical defects on both interfaces [18] and different electrode material used for the contacts [19] -must be considered when accounting for the asymmetric characteristics of the dielectric constant-electric field. and a coercive field (E c ) of 43 kV/cm was observed under an electric field of 200 kV/cm.…”

General equivalent circuit derived from capacitance and impedance measurements performed on epitaxial ferroelectric thin films

“…[4][5][6][7][8][9] These can be obtained by performing capacitance-voltage (C-V) measurements at different temperatures and frequencies or by using impedance/dielectric spectroscopy. [10][11][12][13][14][15][16][17] Among the most studied ferroelectric materials are BaTiO 3 (BTO) and Pb(Zr,Ti)O 3 (PZT). 18 For long time, the dielectric properties of these materials were studied in the bulk form, as for example single crystals or ceramics in the case of BTO, or only ceramics in the case of the PZT.…”

Enhanced ferroelectric and piezoelectric response in Mn-doped Bi0.5Na0.5TiO3–BaTiO3 lead-free film by pulsed laser deposition

“…The applied field corresponding to the maximum ε T 33 /ε 0 was ∼5 kV/mm. This should be attributed to the ferroelectric domain structure, electronic and ionic polarizations [13,21]. Fig.…”