A Nonlinear Electro-Thermal Scalable Model for High-Power RF LDMOS Transistors

Wood, John; Aaen, Peter H.; Bridges, D.; Lamey, D.; Guyonnet, M.; Chan, D.; Monsauret, N.

doi:10.1109/tmtt.2008.2011172

Cited by 33 publications

(13 citation statements)

References 18 publications

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“…Our comprehensive model incorporates a measurementbased nonlinear electrothermal transistor model [19], which was extracted from a 5.0-mm on-wafer transistor. A dense pattern of pulsed I-V and S-parameter measurements are taken over the gate-drain voltage space of the transistor, bounded by the maximum drain current, breakdown voltage, and the maximum allowable power dissipation.…”

Section: A Transistor Model Developmentmentioning

confidence: 99%

Multiphysics Modeling of RF and Microwave High-Power Transistors

Aaen¹,

Wood

Bridges³

et al. 2012

IEEE Trans. Microwave Theory Techn.

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Abstract-In this paper, we present a multi-physics approach for the simulation of high-power RF and microwave transistors, in which electromagnetic, thermal, and nonlinear transistor models are linked together within a harmonic-balance circuit simulator. This approach is used to analyze a laterally diffused metal-oxide semiconductor (LDMOS) transistor that has a total gate width of 102 mm and operates at 2.14 GHz. The transistor die is placed in a metal-ceramic package, with bondwire arrays connecting the die to the package leads. The effects of three different gate bondpad layouts on the transistor efficiency are studied. Through plots of the spatial distributions of the drain efficiency and the time-domain currents and voltages across the die, we reveal for the first time unique interactions between the electromagnetic effects of the layout and the microwave behaviour of the large-die LDMOS power field-effect transistor (FET).Index Terms-Global modeling, electrothermal, laterallydiffused metal-oxide-semiconductor (LDMOS) transistor, power field-effect transistor (FET).

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Section: A Transistor Model Developmentmentioning

confidence: 99%

Multiphysics Modeling of RF and Microwave High-Power Transistors

Aaen¹,

Wood

Bridges³

et al. 2012

IEEE Trans. Microwave Theory Techn.

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“…The multi-physics model incorporates a measurement-based nonlinear electrothermal transistor model [5], which was extracted from a 5.0-mm on-wafer transistor. The extrinsic parameters were determined [6], and the intrinsic nonlinear model was then scaled down to the unit gate width of 0.5-mm.…”

Section: Model Developmentmentioning

confidence: 99%

Multi-physics modeling of high-power microwave transistors

Aaen¹,

Wood²,

Bridges³

et al. 2012

2012 IEEE/MTT-S International Microwave Symposium Digest

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Abstract-In this paper, we present a multi-physics approach for the simulation of high-power microwave transistors in which electromagnetic, thermal, and nonlinear transistor models are linked together within a harmonic-balance circuit simulator. This approach is used to analyze an LDMOS transistor operating at 2.14 GHz. The total gate width of the die is 102 mm, and the die is placed in a ceramic package and connected using bond-wire arrays at gate and drain. The effects of three different gate bondpad metallization on the transistor efficiency are studied. Plots of the spatial distribution of the drain efficiency, and time-domain current and voltage provide a unique insight and understanding of the behaviours induced by the different bond-pads.

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“…A high-level view of the nonlinear model structure. The model can be thought of as a set of 'shells' comprising the gate and drain manifolds, the extrinsic network, the thermal model, and at the kernel, the intrinsic nonlinear model [16]. effects.…”

Section: Mosfet Modeling Approachesmentioning

confidence: 99%

On the modeling of LDMOS RF power transistors

Wood¹,

Aaen²

2010

IEEE Custom Integrated Circuits Conference 2010

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Abstract-In this review we present a technology-independent approach to the construction of a circuit model for a high-power radio-frequency (RF) LDMOS FET. We compare and contrast this approach with other MOSFET modeling approaches used for digital and RF CMOS applications. We describe the structure of our model, the mathematical development of the constitutive relations, and the functions used for their approximation. This model is fully nonlinear, with a self-consistent dynamic electrothermal component, and uses electromagnetic simulations to derive the on-die and in-package components that connect the transistor to the outside world. We also outline some of the characterization and validation measurement challenges that we have overcome in the development of this model.

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A Nonlinear Electro-Thermal Scalable Model for High-Power RF LDMOS Transistors

Cited by 33 publications

References 18 publications

Multiphysics Modeling of RF and Microwave High-Power Transistors

Multiphysics Modeling of RF and Microwave High-Power Transistors

Multi-physics modeling of high-power microwave transistors

On the modeling of LDMOS RF power transistors

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