We report on the design of a scanning near-field optical microscope (SNOM) for spatially resolved photoluminescence experiments at temperatures down to 90 K. First results on In 0.4 Ga 0.6 As quantum dots are presented.Scanning near-field optical microscopy (SNOM) [1], with its spatial resolution much better than the diffraction limit, is ideally suited to the optical investigation of inhomogeneous semiconductor structures on a lateral scale of about 100 nm. In such systems, the different sizes of the structures result in different optical transition energies, which lead to inhomogeneous broadening in conventional photoluminescence spectroscopy. Spatially resolved photoluminescence experiments, in contrast, allow detailed investigation of individual structures.In this work, we describe a SNOM setup for spatially resolved photoluminescence experiments at temperatures down to 90 K. In our first experiments on self-organized In 0.4 Ga 0.6 As quantum dots embedded in a GaAs matrix using uncoated fiber tips, we can resolve the photoluminescence emission of a few dots or even of single dots.