A Nonvolatile 2-Mbit CBRAM Memory Core Featuring Advanced Read and Program Control

Dietrich, Stefan; Angerbauer, M.; Ivanov, Milena; Gogl, D.; Hoenigschmid, H.; Kund, M.; Liaw, C.M.; Markert, M.; Symanczyk, R.; Altimime, L.; Bournat, S.; Mueller, Georg

doi:10.1109/jssc.2007.892207

Cited by 99 publications

(71 citation statements)

References 2 publications

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“…This is well known for resistively switching electrochemical metallization cells and reflects the drift of Cu ions through the amorphous aluminum oxide layer, the cathodic reduction, and growth of Cu filaments toward the anode. [14][15][16][17] First results of further control experiments with an aqueous solution of CuSO 4 top electrode suggest that aluminum oxide represents the electrolyte which mediates a Cu ion based electrochemical switching.…”

mentioning

confidence: 99%

On the origin of bistable resistive switching in metal organic charge transfer complex memory cells

Kever

Böttger

Schindler

et al. 2007

Applied Physics Letters

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Electrical characteristics of Cu:tetracyanoquinodimethane (TCNQ) devices with different electrodes were studied. The comparison of impedance spectroscopic measurements on devices with Al and Pt top electrodes proved the existence of a high resistive interface layer between Cu:TCNQ and Al. An equivalent circuit was modeled and the resulting values suggest that the interface layer is composed of naturally formed aluminum oxide. Devices with deliberately formed aluminum oxide and without Cu:TCNQ were fabricated and revealed a similar behavior. The authors propose that the switching effect in Cu:TCNQ thin film devices is a Cu ion based electrochemical effect occurring in a thin aluminum oxide layer.

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mentioning

confidence: 99%

On the origin of bistable resistive switching in metal organic charge transfer complex memory cells

Kever

Böttger

Schindler

et al. 2007

Applied Physics Letters

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“…In 2007, Qimonda/Altis/Infineon consortium demonstrated a 2 Mb CBRAM test chip with read-write control circuitry implemented in a 90 nm technological node with read/write cycle time less than 50 ns [36]. The corresponding CBRAM circuit was developed using 8 F 2 corecells associating 1 MOS transistor with 1 Conductive Bridging Junction (i.e.…”

Section: Phase Change Memories Pcmmentioning

confidence: 99%

Design challenges for prototypical and emerging memory concepts relying on resistance switching

Müller

Deleruyelle

Ginez

et al. 2011

2011 IEEE Custom Integrated Circuits Conference (CICC)

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“…7 The resistance ratio R OFF /R ON is typically ∼10 5 . 12 The PMC is a low-power device, requiring switching energy ∼10 −15 J, three orders of magnitude lower than for example in phase-change memory (also chalcogenide-based), and the ionic switching takes ∼50 ns. 13 An attraction is that memory based on structural changes should be non-volatile: ON-state data retention in PMC is estimated to be >10 yrs at room temperature; 8 and recently retention up to 10 5 minutes at 200 • C has been demonstrated for Ge-S-based PMC.…”

Section: Introductionmentioning

confidence: 99%

Reversible migration of silver on memorized pathways in Ag-Ge40S60 films

et al. 2015

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Reversible and reproducible formation and dissolution of silver conductive filaments are studied in Ag-photodoped thin-film Ge 40 S 60 subjected to electric fields. A tip-planar geometry is employed, where a conductive-atomic-force microscopy tip is the tip electrode and a silver patch is the planar electrode. We highlight an inherent "memory" effect in the amorphous chalcogenide solid-state electrolyte, in which particular silver-ion migration pathways are preserved "memorized" during writing and erasing cycles. The "memorized" pathways reflect structural changes in the photodoped chalcogenide film. Structural changes due to silver photodoping, and electrically-induced structural changes arising from silver migration, are elucidated using Raman spectroscopy. Conductive filament formation, dissolution, and electron (reduction) efficiency in a lateral device geometry are related to operation of the nano-ionic Programmable Metallization Cell memory and to newly emerging chalcogenide-based lateral geometry MEMS technologies. The methods in this work can also be used for qualitative multi-parameter sampling of metal/amorphous-chalcogenide combinations, characterizing the growth/dissolution rates, retention and endurance of fractal conductive filaments, with the aim of optimizing devices. C 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

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A Nonvolatile 2-Mbit CBRAM Memory Core Featuring Advanced Read and Program Control

Cited by 99 publications

References 2 publications

On the origin of bistable resistive switching in metal organic charge transfer complex memory cells

On the origin of bistable resistive switching in metal organic charge transfer complex memory cells

Design challenges for prototypical and emerging memory concepts relying on resistance switching

Reversible migration of silver on memorized pathways in Ag-Ge40S60 films

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