Design challenges for prototypical and emerging memory concepts relying on resistance switching

Müller, Christophe; Deleruyelle, Damien; Ginez, O.; Portal, J.M.; Bocquet, Marc

doi:10.1109/cicc.2011.6055316

Cited by 3 publications

(3 citation statements)

References 36 publications

(37 reference statements)

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“…The work presented above relies on the assumption of economically viability of numerous on-chip distributed memories. While this may prove doable in the near future because of advances in the area of dense nonvolatile emerging technology memories [32] such as Magnetic RAMs (MRAMs) and Phase-Change Memories (PCM), devising an approach that makes it possible to share memory would further provide the distinct advantage of opening the way for multithreading, which is by far the most popular parallel programming model in the area of general purpose computing. We here present a low-overhead hardware/software distributed shared memory approach that makes such distributedmemory architecture multithreading-capable.…”

Section: Shared Memory/multithreadingmentioning

confidence: 99%

Novel Techniques for Smart Adaptive Multiprocessor SoCs

Ost

Garibotti

Sassatelli

et al. 2024

IEEE Trans. Comput.

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The growing concerns of power efficiency, silicon reliability and performance scalability motivate research in the area of adaptive embedded systems, i.e. systems endowed with decisional capacity, capable of online decision making so as to meet certain performance criteria. The scope of possible adaptation strategies is subject to the targeted architecture specifics, and may range from simple scenario-driven frequency/voltage scaling to rather complex heuristic-driven algorithm selection. This paper advocates the design of distributed memory homogeneous multiprocessor systems as a suitable template for best exploiting adaptation features, thereby tackling the aforementioned challenges. The proposed solution lies in the combined use of a typical application processor for global orchestration along with such an adaptive multiprocessor core for the handling of data-intensive computation. This paper describes an exploratory homogeneous multiprocessor template designed from the ground up for scalability and adaptation. The proposed contributions aim at increasing architecture efficiency through smart distributed control of architectural parameters such as frequency, and enhanced techniques for load balancing such as task migration and dynamic multithreading.

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Section: Shared Memory/multithreadingmentioning

confidence: 99%

Novel Techniques for Smart Adaptive Multiprocessor SoCs

Ost

Garibotti

Sassatelli

et al. 2024

IEEE Trans. Comput.

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“…Y. Zhang et al [35] have demonstrated that, in structures with symmetric inert electrodes, for example, Pt/HfO 2 /Pt and also in asymmetric Ti/HfO 2 /Pt structures, the valence change mechanism (VCM), in addition to Joule heating, is of paramount importance in the formation mechanism of CFs. VCM is based on the migration of oxygen vacancies, with the temperature-aided formation of CFs, consisting of conductive phases with a changed valence state in host media, relying on redox electrochemistry [16,35]. From another perspective, S. Wang et al [12] offer a third possibility of hybrid CFs consisting of two intrinsic regions-one formed by the migration of oxygen vacancies (VCM) and another region formed by metallic ions (ECM).…”

Section: Electrical Measurementsmentioning

confidence: 99%

“…Recently, Wang et al [12] have even proposed the mechanism of a hybrid conductive filament, combining metal and oxygen vacancies-based models, brought about by the addition of a Ag and Cu nanoparticle layer. Introducing controlled impurities has been shown to help modify not only the characteristics relevant to resistive switching but also the magnetic properties of materials, possibly making way for new applications [16]. For example, we recently showed that layering HfO 2 with Fe 2 O 3 allows us to control the magnetic and resistive switching properties of a structure [17].…”

Section: Introductionmentioning

confidence: 99%

Bipolar Resistive Switching in Hafnium Oxide-Based Nanostructures with and without Nickel Nanoparticles

et al. 2022

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As research into additives and intentionally introduced impurities in dielectric thin film for enhancing the resistive switching based random access memories (RRAM) continues to gain momentum, the aim of the study was to evaluate the effects of chemically presynthesised Ni nanoparticles (NPs) embedded in a dielectric layer to the overall structure and resistive switching properties. HfO2-based thin films embedded with Ni NPs were produced by atomic layer deposition (ALD) from tetrakis(ethylmethylamino)hafnium (TEMAH) and the O2 plasma ALD process onto a TiN/Si substrate. The Ni NPs were separately synthesised through a continuous flow chemistry process and dispersed on the dielectric layer between the two stages of preparing the HfO2 layer. The nanodevices’ morphology and composition were analysed with physical characterisation methods and were found to be uniformly dispersed across the sample, within an amorphous HfO2 layer deposited around them. When comparing the resistive switching properties of otherwise identical samples with and without Ni NPs, the ILRS/IHRS ratio rose from around a 4 to 9 at 0.2 V reading voltage, the switching voltage dropped from ~2 V to ~1.5 V, and a distinct increase in the endurance characteristics could be seen with the addition of the nanoparticles.

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A software approach for combating asymmetries of non-volatile memories

Chen

Jones

2012

Proceedings of the 2012 ACM/IEEE International Symposium on Low Power Electronics and Design

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Design challenges for prototypical and emerging memory concepts relying on resistance switching

Cited by 3 publications

References 36 publications

Novel Techniques for Smart Adaptive Multiprocessor SoCs

Novel Techniques for Smart Adaptive Multiprocessor SoCs

Bipolar Resistive Switching in Hafnium Oxide-Based Nanostructures with and without Nickel Nanoparticles

A software approach for combating asymmetries of non-volatile memories

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