A novel 2-12GHz 14dBm High Efficiency Power Distributed Amplifier for Ultra-Wideband- Applications Using a Low-Cost SiGe BiCMOS Technology

Sewiolo, Benjamin; Weigel, Robert

doi:10.1109/mwsym.2008.4633254

Cited by 9 publications

(6 citation statements)

References 10 publications

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“…Hence the 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 conventional circuit structure has been modified to attain high gain, output power and power-added efficiency. Therefore the collector line has been tapered to get rid of the absorbing resistor [5], capacitive coupling has been applied to equalize the voltage swing at the base, and the cascode gain cells have been power-matched [6]. A chip micrograph of the proposed HBT amplifier is depicted in Fig.…”

Section: Travelling Wave Power Amplifiermentioning

confidence: 99%

New Integrated UWB-Sensor Electronics for Array-based Super-Resolution Imaging Techniques

Sachs¹,

Borokhovych²,

Gustat³

et al. 2009

Frequenz

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Ultra wideband sensors are well suited to detect or image hidden objects. In order to approach the physical limits of ultra wideband detection and imaging, super resolution techniques have to be applied for processing the captured sensor data. These techniques are very sensitive to the quality of the measurement data, i. e. their bandwidth, their dynamic range and their time stability. Implementation issues of the sensor electronics implied by those parameters are considered and corresponding demands are deduced. In this article a sensor conception is presented which largely meets these requirements. It is based on a digital wideband correlator which promotes monolithic integration of the system components in a low cost RF-technology and provides superior jitter performance. Its working principle will be considered as well as the implementation of some fundamental circuits.

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Section: Travelling Wave Power Amplifiermentioning

confidence: 99%

New Integrated UWB-Sensor Electronics for Array-based Super-Resolution Imaging Techniques

Sachs¹,

Borokhovych²,

Gustat³

et al. 2009

Frequenz

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“…Comparing TWAs with each other is challenging, as they are optimized for differing bandwidths, S 21 , P 1 dB , efficiencies, and supply voltages, using different technologies such as GaAs, CMOS, BiCMOS, or SOI. The work of Sewiolo and Weigel [5] comes closest to the optimizations targeted here. It applies a four-stage bipolar common source tapered architecture to a V dd of 5 V and achieves a gain of 9 dB up to frequencies of 12 GHz.…”

Section: Comparison With State-of-the-artmentioning

confidence: 99%

Analysis and design of an efficient, fully integrated 1–8 GHz traveling wave power amplifier in 180 nm CMOS

Carls

Ellinger

Zhang

et al. 2009

Int. J. Microw. Wireless Technol.

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Traveling wave amplifiers (TWAs) offer the advantage of broadband amplification and a closed set of equations that allow deriving the RF gain by means of treating TWAs as discrete transmission line approximations. Up to now, however, the significant losses associated with CMOS integrated inductors have been neglected. This work presents a new approach for determining the transmission line losses and phase constants that will bring about an enhanced gain prediction accuracy. The theory is verified by means of a realized design example. The working principle of the integrated DC supply inductor is discussed, whose performance is based on the inductors self-resonance effect. When applying a supply voltage V dd of 2.4 V, the measured compression point P 1dB and the power added efficiency PAE at 2.4 GHz amount to 16.9 dBm and 19.6%, respectively. At 5.5 GHz, a value of 16.6 dBm for P 1dB and an associated PAE of 13.9% are achieved. The peak RF gain for these output power values reaches 11 dB, and values greater than 8 dB are obtained up to 7 GHz. I . I N T R O D U C T I O NA trend that is developing in recent years is the requirement for mobile RF frontends to accommodate several RF transmission standards. From a power amplifier (PA) perspective, multi-standard signal transmission at frequencies of 2.4 GHz (802.15.1) up to 5.725 GHz (802.11.x) requires broadband amplifiers such as e.g. traveling wave amplifiers (TWAs). The TWA principle, first introduced by Percival [1] and Ginzton et al. [2], was at the beginning envisaged for circuit realizations by means of vacuum tubes, discrete inductors, and capacitors. Ayasli et al. [3] and Beyer et al. [4] developed the original equations set further for the accommodation of the structural conditions that arise when implementing TWAs in GaAs FET technology. With the high substrate resistance of GaAs, the parasitic losses associated with the inductors could be neglected and the dominant loss factor reducing the RF gain versus frequency was the input gate source resistance R gs . Given this background, the developed equation sets were satisfactorily adequate to predict the achievable gain bandwidth product (GBW) of TWAs.With the rise of CMOS integration as the major circuit technology nowadays, this, unfortunately, is no longer the case. Parasitic series and parallel losses associated with the integrated inductors significantly influence the overall circuit behavior. This is particularly true for TWA architectures, which heavily rely on integrated inductors to approximate the input and output transmission lines.In this work, we propose a practical analytical solution for TWA architectures that incorporates the dominant loss factors of CMOS integrated inductors. A discrete transmission line model is presented that comprises resistive, capacitive, and inductive effects occurring in CMOS TWA realizations. Based on this model, the associated transmission line damping factor and phase constant are calculated and used for the derivation of the small signal gain. The RF gain is the...

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“…Due to the very broad band characteristics, the power amplifiers (PAs) for UWB systems have been separately developed for the low band (3.1–4.8 GHz) and high band (6–10 GHz) . However, the full‐bandwidth UWB PAs have also been reported recently .…”

Section: Introductionmentioning

confidence: 99%

“…The feedback‐resistor connected between the drain and gate increases the bandwidth, but reduces the gain, P1dB, and power‐added efficiency (PAE) of a PA. The distributed amplifier topology is an effective method that enables very wideband operation due to the embedded broadband artificial transmission‐line input and output matching networks . The drawback of the distributed amplifier is that it has low P1dB and poor efficiency due to the wasted power in the backward terminator.…”

Section: Introductionmentioning

confidence: 99%

An ultrawideband CMOS power amplifier using two-stage distributed matching techniques

Yoo

Baek

et al. 2014

Microw. Opt. Technol. Lett.

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An ultrawideband CMOS power amplifier (PA) with high efficiency, high P1dB, and flat small signal gain is proposed. The CMOS PA uses the distributed amplifier concept to extend the operating bandwidth from 3.1 to 10.6 GHz, and incorporates the active load modulation technique to improve the power-added efficiency (PAE). The active load modulation is realized with two cascode power stages using two different bias classes (class-AB and class-B) to increase the PAE. The experimental results show that the output P1dB is 17.5 dBm with the maximum PAE of 24.6% at 4 GHz. The measured small signal gain is 8 6 0.3 dB from 3.1 to 10.6 GHz. The proposed PA is implemented in a 0.13-lm CMOS process, and the chip area is 0.64 mm 2 including pads.

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A novel 2-12GHz 14dBm High Efficiency Power Distributed Amplifier for Ultra-Wideband- Applications Using a Low-Cost SiGe BiCMOS Technology

Cited by 9 publications

References 10 publications

New Integrated UWB-Sensor Electronics for Array-based Super-Resolution Imaging Techniques

New Integrated UWB-Sensor Electronics for Array-based Super-Resolution Imaging Techniques

Analysis and design of an efficient, fully integrated 1–8 GHz traveling wave power amplifier in 180 nm CMOS

An ultrawideband CMOS power amplifier using two-stage distributed matching techniques

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