A novel 30 V p-channel trench gate power MOSFET with ultra low on-state-resistance at low-gate-voltage

Narazaki, Atsushi; Hisamoto, Y.; Tadokoro, Chihiro; Takeda, Mitsuhiro; Hagino, H.

doi:10.1109/ispsd.1997.601495

Cited by 7 publications

(1 citation statement)

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“…Introduced by Fairchild in 1998, the U-shaped trench-gated MOSFET (UMOSFET) is applied as a switch in advanced power-management applications in a number of electronic devices. The UMOSFET is a vertical current-flow device that exhibits significantly reduced onresistance and eliminates the junction field-effect transistor resistance in power MOSFETs (1)(2)(3). To study the drain PN-junction leakage in the UMOSFET, hightemperature reverse-bias (HTRB) stress is usually employed.…”

Section: Introductionmentioning

confidence: 99%

High-Temperature Reverse-Bias Stressing of Thin Gate Oxides in Power Transistors

et al. 2014

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High-temperature reverse-bias (HTRB) and Fowler-Nordheim (FN) stresses were applied to assess the reliability of n-channel Ushaped trench-gated metal-oxide-Si field-effect transistors (NUMOSFETs) of ~0.5 µm trench width and ~1 µm channel length. The HTRB causes degradations in the threshold voltage and drain leakage of the N-UMOSFET. The degradation is observed when the HTRB is applied in a humid ambient and is attributed to the generation, by the stress, of hydrogen protons (H + s) in the gate oxide. It is concluded that HTRB gives rise to negative-bias temperature instability (NBTI) in a parasitic P-channel MOSFET structure occurring in the trench base of the N-UMOSFET. The NBTI is promoted by the degraded condition of the gate oxide at the trench base as observed by charge pumping and SEM following FN stress of the N-UMOSFET.

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Section: Introductionmentioning

confidence: 99%