A novel 4H–SiC MESFET with modified channel depletion region for high power and high frequency applications

Aminbeidokhti, Amirhossein; Orouji, Ali A.

doi:10.1016/j.physe.2011.11.013

Cited by 40 publications

(12 citation statements)

References 15 publications

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“…Due to the decrease on the transconductance, the MAG for the UUSC-MESFET is lower than other two structures at lower frequency. The expressions for the f T and f max are as followings [9]:…”

Section: Rf Performancesmentioning

confidence: 99%

“…A lot of researches on SiC MESFET have been reported and most of them are based on the double-recessed (DR-MESFET) structures [5], such as recessed source/drain drift region [6], multi-recessed source/drain drift region [7], partly un-doped space region [8], multiple-recessed depletion region [9]. However, the structures mentioned above achieve smaller capacitance but do not implement a larger current or a larger breakdown voltage.…”

Section: Introductionmentioning

confidence: 99%

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Improved Ultrahigh Upper Gate 4H-SiC MESFET with Serpentine Channel Structure

Jia¹,

Luo²,

Ma³

2017

dtcse

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Abstract. An improved ultrahigh upper gate 4H-SiC MESFET (UU-MESFET) with serpentine channel structure (UUSC-MESFET) was proposed. With the implement of the serpentine channel, the channel electric field and the gate depletion layer have been more modulated compared with the UU-MESFET. The simulations show that the breakdown voltage and the drain saturation current of UUSC-MESFET are improved by 13.6%, 12% than those of UU-MESFET and by 44.5%, 23% than those of the double-recessed structure (DR-MESFET). By introducing a recessed channel layer, the proposed structure has an improvement of 27.3%, 81.3% in the out maximum power density compared with that of the UU-MESFET and DR-MESFET, respectively. In the meanwhile, the proposed structure possesses smaller gate-source capacitance, which results in better RF characteristics. Therefore the proposed structure has a superior electrical characteristic and performance.

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Section: Rf Performancesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Improved Ultrahigh Upper Gate 4H-SiC MESFET with Serpentine Channel Structure

Jia¹,

Luo²,

Ma³

2017

dtcse

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show abstract

“…It is an important parameter to diagnosis noise performance's device. F min is given as follows [20]:…”

Section: Rf Characteristicsmentioning

confidence: 99%

A novel SOI-MESFET structure with double protruded region for RF and high voltage applications

Orouji

Sheikholeslami

2015

Materials Science in Semiconductor Processing

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“…On the other hand, the use of silicon carbide (SiC) semiconductor causes to achieve the low specific onresistance and the breakdown voltage in the U-MOSFET [8][9][10] due to the high-performance among wide band gap, high saturated drift velocity of electrons, and high thermal conductivity feasibility. High thermal conductivity of SiC also increases the possibility of integration.…”

Section: Introductionmentioning

confidence: 99%