A novel SOI-MESFET structure with double protruded region for RF and high voltage applications

Orouji, Ali A.; Sheikholeslami, Seyed Mostafa

doi:10.1016/j.mssp.2014.10.037

Cited by 24 publications

(1 citation statement)

References 16 publications

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“…Doping engineering, work function engineering, voltage difference engineering, and many other techniques have all been proposed by many researchers to increase the efficiency of these type of devices. [17][18][19][20][21][22][23][24][25][26] It should be noted that all of the reported structures are usually configured in a double-gate (DG) form in order to increase the gate control over the channel. In fact, fabricating DG is one of the serious problems which can be considered as one of the important technical challenges.…”

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confidence: 99%

Single Gate Graphene Nanoribbon-on-Insulator (GNROI) FET as a Novel Strategy to Enhance Electrical Performance-Numerically RF and DC Characteristics Extraction

Anvarifard¹,

Ramezani²,

Amiri³

2020

ECS J. Solid State Sci. Technol.

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Graphene nanoribbon Field Effect Transistor (GNRFET) as a recently introduced interesting candidate has gotten a great deal of interest in many device fields. The paper has suggested a novel configuration in the case of only single gate on the top channel. The GNR is deposited on SiO 2 considered as the thick buried oxide instead of SiC material in the single gate conventional GNRFET. This reformation is led to the gradual variation of the surface potential thus increasing the electric field and electron velocity. An increase in the drain current for the proposed device is the most important exploration in this work. The numerically extracted parameters by TCAD revealed the electrical performance improvement for both the DC and RF conditions in the cases of the ON current, sub-threshold swing, DIBL, I on /I off , parasitic capacitances, transconductance, power gains, and output conductance. It is worth noting that the short channel effects are well controlled in the new proposed configuration. Also, the impact of different High-K dielectrics as the buried oxide on the electrical performance has been studied and the most suitable buried oxide has been selected to reach the best results.

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