A novel 6H-SiC UMOSFET_ACCUFET with low specific on-resistance and peak electric field

Fathipour, Morteza; Peyvast, Negin; Shoaazar, N.

doi:10.1109/commad.2008.4802111

Cited by 2 publications

(1 citation statement)

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“…In case of an accumulation channel trench MOSFET, the width of the channel formed by the same gate voltage is much wider. 5) Consequently, the channel resistance of an accumulation channel MOSFET is lower than that of an inversion channel MOSFETs Fig. 2(a) shows a cross-sectional view of the inversion channel trench MOSFET structure.…”

Section: Introductionmentioning

confidence: 99%

Design of a Novel SiC MOSFET Structure for EV Inverter Efficiency Improvement

Jung

Lee

Lim

2015

WEVJ

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Inverters for electric vehicle motor drive systems are essential in converting the battery's direct current into alternating current. Si(Silicon) IGBT that is commonly used in inverter modules have large Vce,sat and turn-off time due to p+ drain and tail current. Therefore, inverter modules consist of Si IGBT with relatively low efficiency. If we can use MOSFETs instead of IGBT in inverter modules, it is possible to achieve high efficiency because of short turn-off time and high operating frequency. Yet also has a problem; Si MOSFETs has large on-resistance compared to Si IGBTs. In this study, SiC(Silicon Carbide) was used to make MOSFETs instead of Si. Futhermore, an accumulation channel concept is adapted to a SiC trench MOSFET, namely Trench ACCUFET. Compared with conventional SiC trench MOSFETs, the novel SiC trench ACCUFET structure has not only lower on-resistance but also high breakdown voltage as shown by the simulation results. We fabricated the Trench ACCUFET for verification, and described improvements that is to be made.

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Section: Introductionmentioning

confidence: 99%