A novel analytical model of the vertical breakdown voltage on impurity concentration in top silicon layer for SOI high voltage devices

Hu, Shengdong; Zhang, Bo; Li, Zhaoji

doi:10.1080/00207217.2011.576598

Cited by 8 publications

(1 citation statement)

References 24 publications

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“…, the BV of the device is highest. Substituting this equation into equation 12with (6), 7and 9, the RESURF condition [23][24] of SOI LDMOS device should be satisfied as (15).…”

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confidence: 99%

Unified Analytical Model for SOI LDMOS With Electric Field Modulation

Duan

Xing

Dong

et al. 2020

IEEE J. Electron Devices Soc.

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The unified analytical model is proposed for SOI LDMOS (Silicon On Insulator Lateral Double-diffused Metal Oxide Semiconductor) based on the electric field modulation in this paper for the first time. The analytical solutions of the surface electric field distributions and potential distributions are derived on the basis of the 2-D Poisson equation. The variation of the buried layer parameters modulates the surface electric field by the electric field modulation effect to optimize the surface electric field distribution of the device. Also, the simulation results obtained through the simulation software ISE are consistent with the expected results of the analytical model. This not only proves the feasibility of the electric field modulation theory, but also shows that the accurate analytical model will be of great guiding significance for designing and optimizing the same LDMOS based on SOI structures.

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“…, the BV of the device is highest. Substituting this equation into equation 12with (6), 7and 9, the RESURF condition [23][24] of SOI LDMOS device should be satisfied as (15).…”

Section: ( ) ( )mentioning

confidence: 99%