A novel BST storage capacitor node technology using platinum electrodes for Gbit DRAMs

Khamankar, R.; Kressley, M.A.; Visokay, M.R.; Moïse, T. S.; Xing, Guang Zhong; Nemoto, Shigeyuki; Fang, Shaoli; Wilson, Arthur M.; Gaynor, Justin F.; Hurd, Trace; Crenshaw, D.; Colombo, Luca

doi:10.1109/iedm.1997.650372

Cited by 16 publications

(6 citation statements)

References 2 publications

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“…Several attempts to integrate the devices having larger scale than 1-Gb have been reported using the most advanced silicon ULSI technologies. [1][2][3][4] In these devices, BST of several tens of nanometer thick are usually used as dielectric films which are composed by CVD (Chemical Vapor Deposition) or sputtering methods. For highly integrated DRAMs, thinner dielectric films are needed even for the materials with high dielectric constants such as BST, PZT (Pb(Zr, Ti)O 3 ), etc.…”

Section: Introductionmentioning

confidence: 99%

Analysis of Decomposed Layer Appearing on the Surface of Barium Strontium Titanate

Fujisaki

Shimamoto

Matsui

1999

Jpn. J. Appl. Phys.

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Chemical states and structures of thin degenerated layers grown on the surface of (Ba, Sr)TiO 3 (BST) films are investigated by X-ray photoelectron spectroscopy (XPS). It was found that decomposition occurred as a result of the air exposure and also as a result of annealing. A careful study of a Ba 3d peak in the XPS spectrum reveals that Ba in BST crystal easily decomposes out of the perovskite phase and makes BaCO 3 or barium oxides, whereas no significant change occurs in Sr, or Ti oxides. This degenerated layer can be removed by nitric acid treatment. It was also found that the surface BST becomes rather stable against exposure to air compared with the original one after the nitric acid treatment.

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Section: Introductionmentioning

confidence: 99%

Analysis of Decomposed Layer Appearing on the Surface of Barium Strontium Titanate

Fujisaki

Shimamoto

Matsui

1999

Jpn. J. Appl. Phys.

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“…In past decades, many studies showed that the BST film, applied on Gigabit DRAMs' capacitor, had poor thermal stability and large leakage current [1][2][3][4], so the multi-film structure of BST/ultra-thin-chromium(Cr) layer/BST was investigated to enhance the thermal stability and reduce the leakage in this study.…”

Section: Introductionmentioning

confidence: 99%

Effects of Thermal Stabilities for the Ultra Thin Chromium Layers Applied on (Ba, Sr)TiO₃ Thin Films

Kuo

Shye

Chiou

et al. 2004

Integrated Ferroelectrics

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“…1,2 The dielectric is deposited onto the capacitor's oxygen-stable electrode materials (typically Pt, RuO 2 , or IrO 2 ) in a deposition ambient that contains an oxidizer. 1,2 The dielectric is deposited onto the capacitor's oxygen-stable electrode materials (typically Pt, RuO 2 , or IrO 2 ) in a deposition ambient that contains an oxidizer.…”

Section: Introductionmentioning

confidence: 99%

¹⁸O study of the oxidation of reactively sputtered Ti_1−xAl_xN barrier

et al. 2001

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The preparation of high-permittivity perovskite materials requires high-temperature (550–750 °C) oxidizing environments, providing stringent limitations on the choice of electrode materials. To minimize interdiffusion and oxidation reactions, an electrically conductive diffusion barrier such as Ti1−xAlxN is needed below the electrode material (Pt, IrO2, RuO2…). Ti1−xAlxN films were deposited by multitarget reactive sputtering in a mixture of Ar and N2. The stability of these films has been investigated under typical conditions for crystallization of perovskite dielectrics. Sample composition was characterized using Rutherford backscattering spectroscopy and nuclear reaction analysis. In particular, the concentration depth profiles of both 18O and 27Al were measured before and after RTA treatments via the narrow resonances of 18O(p,α)15N at 151 keV (FWHM = 100 eV) and 27Al(p,γ)28Si at 992 keV (FWHM = 100 eV). The different 18O excitation curves show that the oxidation resistance increases with Al incorporation. The Al excitation curves indicate a uniform Al content for as-deposited TixAl1−xN and reveal Al diffusion to the surface during the oxidation process which indicates the formation of an Al-rich oxide layer at the TixAl1−xN surface, leaving a layer depleted in Al below it.

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A novel BST storage capacitor node technology using platinum electrodes for Gbit DRAMs

Cited by 16 publications

References 2 publications

Analysis of Decomposed Layer Appearing on the Surface of Barium Strontium Titanate

Analysis of Decomposed Layer Appearing on the Surface of Barium Strontium Titanate

Effects of Thermal Stabilities for the Ultra Thin Chromium Layers Applied on (Ba, Sr)TiO₃ Thin Films

¹⁸O study of the oxidation of reactively sputtered Ti_1−xAl_xN barrier

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A novel BST storage capacitor node technology using platinum electrodes for Gbit DRAMs

Cited by 16 publications

References 2 publications

Analysis of Decomposed Layer Appearing on the Surface of Barium Strontium Titanate

Analysis of Decomposed Layer Appearing on the Surface of Barium Strontium Titanate

Effects of Thermal Stabilities for the Ultra Thin Chromium Layers Applied on (Ba, Sr)TiO3 Thin Films

18O study of the oxidation of reactively sputtered Ti1−xAlxN barrier

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Product

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About

Effects of Thermal Stabilities for the Ultra Thin Chromium Layers Applied on (Ba, Sr)TiO₃ Thin Films

¹⁸O study of the oxidation of reactively sputtered Ti_1−xAl_xN barrier