This paper focuses on the impact of variation in the thickness of the oxide
(SiO2) layer on the performance parameters of a FinFET analysed by varying
the oxide layer thickness in the range of 0.8nm to 3nm. While varying the
oxide layer thickness, the overall width of the FinFET is fixed at a value
30nm, and the FinFET parameters are analysed for structures with different
oxide layer thickness. The parameters like drain current, transconductance,
transconductance generation factor, parasitic capacitances, output
conductance, cut-off frequency, maximum frequency, GBW, energy and power
consumption are calculated to study the influence of FinFET oxide (SiO2)
layer thickness variation. It is detected from the result and analysis that
the drain current, transconductance, transconductance generation factor,
gain bandwidth and output conductance improve with decrement in oxide layer
thickness whereas, the parasitic capacitances, cut-off frequency and maximum
frequency degrade when there is a reduction in oxide (SiO2) layer thickness.
The parameters like energy and consumed power of FinFET get better when the
oxide (SiO2) layer thickness increases.