A Novel Copper Reflow Process Using Dual Wetting Layers

Hirao,; Satake,; Kamada,; Sekiguchi,; Tamaki,; Mayumi,

doi:10.1109/vlsit.1997.623693

Cited by 5 publications

(1 citation statement)

References 3 publications

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“…The conductive barriers Ta, Ti, W, and their alloys such as TiN, TiW, WN, TaSi, and TaSiN were investigated successfully. 1,2 However, the barrier metal-free structure can specially reduce the resistance in fine patterns. 3,4 An excellent barrier capability is obtained by forming a thin barrier layer of SiON on the surface of SiOF film.…”

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confidence: 99%

Using NH[sub 3] Plasma Treatment to Improve the Characteristics of Hydrogen Silsesquioxane for Copper Interconnection Application

Chang

Deng

Yeh

et al. 2000

J. Electrochem. Soc.

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Hydrogen silsesquioxane, a material with low dielectric constant, can successfully suppress Cu diffusion without using a barrier metal by implementing a NH3 plasma treatment. Lower leakage current and better barrier capability can be achieved by hydrogen silsesquioxane film after NH3 plasma treatment. Having been treated with different plasma exposure times, this film can still maintain its original dielectric constant with few changes. The decrease in leakage current with increasing exposure time can be attributed to the following mechanisms: dielectric film becomes denser, dangling bonds are passivated, nitride film is formed on the hydrogen silsesquioxane, and the bulk damage of hydrogen silsesquioxane is annealed out. A thin layer of nitride formed on the dielectric is the cause for having better capability. The thickness of the nitride layer on hydrogen silsesquioxane is about 35 nm, and it can prevent the Cu diffusion/migration into the underlying dielectric. The role of our nitride film is to act as a passive diffusion barrier. © 2000 The Electrochemical Society. All rights reserved.

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confidence: 99%