A novel design of high performance and robust ultra-low power SRAM cell based on memcapacitor

Abbasi, Alireza; Setoudeh, Farbod; Tavakoli, Mahdi; Horri, Ashkan

doi:10.1088/1361-6528/ac46d6

Cited by 3 publications

(2 citation statements)

References 63 publications

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“…A less studied element is the memcapacitor 30 . Memcapacitors could theoretically consume lower static power than memristors, see analysis in 31 and other results 32 – 34 . Theoretical work shows that memelements can be described with fractional order integro-differential equations 35 .…”

Section: Introductionmentioning

confidence: 82%

Fractional order memcapacitive neuromorphic elements reproduce and predict neuronal function

Vazquez-Guerrero,

Tuladhar,

Psychalinos

et al. 2024

Sci Rep

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There is an increasing need to implement neuromorphic systems that are both energetically and computationally efficient. There is also great interest in using electric elements with memory, memelements, that can implement complex neuronal functions intrinsically. A feature not widely incorporated in neuromorphic systems is history-dependent action potential time adaptation which is widely seen in real cells. Previous theoretical work shows that power-law history dependent spike time adaptation, seen in several brain areas and species, can be modeled with fractional order differential equations. Here, we show that fractional order spiking neurons can be implemented using super-capacitors. The super-capacitors have fractional order derivative and memcapacitive properties. We implemented two circuits, a leaky integrate and fire and a Hodgkin–Huxley. Both circuits show power-law spiking time adaptation and optimal coding properties. The spiking dynamics reproduced previously published computer simulations. However, the fractional order Hodgkin–Huxley circuit showed novel dynamics consistent with criticality. We compared the responses of this circuit to recordings from neurons in the weakly-electric fish that have previously been shown to perform fractional order differentiation of their sensory input. The criticality seen in the circuit was confirmed in spontaneous recordings in the live fish. Furthermore, the circuit also predicted long-lasting stimulation that was also corroborated experimentally. Our work shows that fractional order memcapacitors provide intrinsic memory dependence that could allow implementation of computationally efficient neuromorphic devices. Memcapacitors are static elements that consume less energy than the most widely studied memristors, thus allowing the realization of energetically efficient neuromorphic devices.

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Section: Introductionmentioning

confidence: 82%

Fractional order memcapacitive neuromorphic elements reproduce and predict neuronal function

Vazquez-Guerrero,

Tuladhar,

Psychalinos

et al. 2024

Sci Rep

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“…A single-ended 7 T cell free from read disturbances, was first proposed in [30], but it suffers from high chances of write failure. Some researchers [31,32] have even used different devices for performance enhancement for bit cell.…”

Section: Introductionmentioning

confidence: 99%

A single ended, single port configuration based 9 T SRAM cell for stability enhancement

Singhal,

Rawat,

Mittal

et al. 2023

Phys. Scr.

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The growing demand for power efficient devices and high-density memories has pushed researchers to develop low power SRAMs. The main objective for these researches is to reduce power consumption and enhances battery life and scaling of technology node. Consequently, in this paper a 9T SRAM bit cell with enhanced stability and single ended, single port configuration is proposed. The cell is designed and simulated at 180 nm technology node with a voltage supply of 1V. The cell proposed has low power consumption owing to single bitline, higher read stability due to isolated read port, better write margin due to disconnected feedback connection and resistant to soft errors because of half select disturbance free architecture. To assess the performance of the proposed cell its performance is compared against existing 6T, 8T, 9TST, SB 9T, TRD 9T, and NTV 9T bit cells. The HSNM (RSNM) and WM values for the proposed cell are equal to 364 mV and 368 mV respectively. The cell is designed to be half select disturbance free and supports bit interleaving. The reliability of the proposed cell is further analysed for local, global and temperature variation. While, the area footprint for the cell is 24.91 µm2.

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An Optimized MOS-Based High Frequency Charge-Controlled Memcapacitor Emulator

Satyanarayan

Trivedi

2022

IEEE J. Emerg. Sel. Topics Circuits Syst.

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A novel design of high performance and robust ultra-low power SRAM cell based on memcapacitor

Cited by 3 publications

References 63 publications

Fractional order memcapacitive neuromorphic elements reproduce and predict neuronal function

Fractional order memcapacitive neuromorphic elements reproduce and predict neuronal function

A single ended, single port configuration based 9 T SRAM cell for stability enhancement

An Optimized MOS-Based High Frequency Charge-Controlled Memcapacitor Emulator

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