A novel doping technology for ultra-shallow junction fabrication: boron diffusion from boron-adsorbed layer by rapid thermal annealing

Kim, Ki Seon; Song, Yun Heub; Park, Ki Tae; Kurino, Hiroyuki; Mizutani, Takashi; Hane, Kazuhiro; Koyanagi, Mitsumasa

doi:10.1016/s0040-6090(00)00808-7

Cited by 17 publications

(4 citation statements)

References 7 publications

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“…For further doping by post-deposition thermal drive-in of the boron, the formation of the α-B layer has two distinct advantages: it acts as an abundant source of dopants and also prevents boron desorption from the Si surface. This is in contrast to the results of other works that also aimed to use depositions from diborane and subsequent thermal annealing to obtain higher dopant activation and deeper junction depths (Inada et al, 1991), (Kim et al, 2000). The difference lies in the fact that in these cases the diborane exposure conditions were designed to avoid or minimize the formation of a distinct layer of boron.…”

Section: Nanometer-deep Junction Formation From α-Boron Layerscontrasting

confidence: 60%

Silicon Photodiodes for Low Penetration Depth Beams such as DUV/VUV/EUV Light and Low-Energy Electrons

Nanver¹

2011

Advances in Photodiodes

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Section: Nanometer-deep Junction Formation From α-Boron Layerscontrasting

confidence: 60%

Silicon Photodiodes for Low Penetration Depth Beams such as DUV/VUV/EUV Light and Low-Energy Electrons

Nanver¹

2011

Advances in Photodiodes

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“…In advanced CMOS and other nanoscale silicon device technologies, the fabrication of junctions with appropriately shallow junction depths, low leakage current and low series resistance, remains challenging. Monolayers could be used as a doping-source activated by thermal [1] or laser [2] annealing which inevitably increases the junction depth. Thus the fabricated diodes then function as conventional p-n diodes.…”

Section: Introductionmentioning

confidence: 99%

Impact of ultra-thin-layer material parameters on the suppression of carrier injection in rectifying junctions formed by interfacial charge layers

Knežević

Suligoj

Nanver

2019

2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)

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Pure amorphous boron (PureB) deposition on Si is used to fabricate ultrashallow low-saturation-current p + nlike diodes even at process temperatures where the boron is not expected to diffuse into the bulk Si. It has been proposed that the bonding of the B atoms to the Si creates a monolayer of fixed negative charge that attracts holes to the interface. In this paper, an investigation using semiconductor simulation tools is performed starting from an all-Si test structure where suppression of electron injection from an n-Si bulk was achieved by introducing a large concentration of negative fixed charge that attracts holes to the interface between a thin-film top-layer and the bulk. This introduces a barrier which lowers the electron saturation current density of the simulated diode to become comparable to or lower than the saturation current density of holes injected into the bulk. The material properties of the top-layer such as electron mobility and tunneling mass, bandgap and electron affinity are individually varied from default Si-values to values typical for amorphous boron layers indicating that a critical concentration of negative fixed charge is always needed for suppression of the electron injection.

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“…The advantage of thermal diffusion is low cost, but it is difficult to obtain shallow junctions due to the fact that dopants are required to be activated at high temperature [36]. The high activation temperature in turn pushes the dopants further into the substrate.…”

Section: Dendrimers -Fundamentals and Applicationsmentioning

confidence: 99%

Dendrimers as Dopant Atom Carriers

Wu¹,

Dan²

2018

Dendrimers - Fundamentals and Applications

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Properties of modern semiconducting transistors and future electron or quantum devices are essentially determined by single dopant atoms. How to precisely control the individual dopant position is one of the key factors to advance these technologies. In this chapter, we first briefly introduce the research progress in single dopant devices. To fabricate single dopant devices at large scale, we then overview our previous propose to control the locations of single dopants by self-assembly of large molecules (polyglycerols) with each carrying one dopant atom. The synthesis process, doping properties, and challenges of the molecular doping technique will be thoroughly elaborated before we conclude this chapter.

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A novel doping technology for ultra-shallow junction fabrication: boron diffusion from boron-adsorbed layer by rapid thermal annealing

Cited by 17 publications

References 7 publications

Silicon Photodiodes for Low Penetration Depth Beams such as DUV/VUV/EUV Light and Low-Energy Electrons

Silicon Photodiodes for Low Penetration Depth Beams such as DUV/VUV/EUV Light and Low-Energy Electrons

Impact of ultra-thin-layer material parameters on the suppression of carrier injection in rectifying junctions formed by interfacial charge layers

Dendrimers as Dopant Atom Carriers

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