The carbonization process of a preferential-domain Si(001)2×1 surface with ethylene was investigated by a combined method of reflection high-energy electron diffraction and Auger electron spectroscopy. It is found that the carbonization process during the so-called incubation time is the Si1−xCx alloy formation before the nucleation of 3C–SiC grains. A reaction model for the Si1−xCx alloy formation and for the 3C–SiC grain growth is proposed for substrate temperatures of 600–750 °C. From the model, we postulate that the external supply of Si and C should be started just at the completion of the lateral 3C–SiC grain growth at temperatures of 600–650 °C in order to obtain thick 3C–SiC layers with a flat surface morphology.

No abstract

No abstract

Bi desorption from a single-domain Si(001)2×1-Bi surface was investigated using grazing-incidence reflection high energy electron diffraction and Auger electron spectroscopy (RHEED-AES). This RHEED-AES method enabled the simultaneous measurement of both the surface structure and the surface coverage, θ Bi, during Bi desorption. As θ Bi decreased from 1 ML to 0 ML, the RHEED intensity profiles indicated several structural changes which were in accordance with previously reported structural changes. Despite these structural changes, the Bi desorption follows first-order reaction kinetics over the entire coverage range of 1 ML≥θ Bi with an activation energy of 1.54 eV.