RHEED-AES observation of Sb surface segregation during Sb-mediated Si MBE on Si(001)

Kim, Ki Seon; Takakuwa, Yuji; Abukawa, T.; Kono, S.

doi:10.1016/s0022-0248(97)00459-4

Cited by 17 publications

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“…13 These values are close to those found in our experiments for silicide growth on Si͑001͒. Three samples were prepared depositing Mn at T sub ϭ550°C under the following conditions: ͑1͒ without Sb ͑REF550͒; ͑2͒ with Sb termination of the Si surface before Mn deposition ͑SbT550͒; ͑3͒ codeposition of Mn and Sb onto a Sb-terminated Si substrate ͑SbC550͒.…”

supporting

confidence: 86%

Surfactant mediated growth of MnSi1.7 on Si(001)

Teichert

Hortenbach

Hinneberg

2001

Applied Physics Letters

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Sb is used as a surfactant for the growth of MnSi1.7 by reactive deposition of Mn on Si(001). It is found that the presence of Sb during the growth strongly increases the island density and changes the crystalline orientation of the MnSi1.7. The morphology and structure of the resulting silicide are the same both for the deposition of Mn only on a Sb-terminated Si(001) surface and for the codeposition of Mn and Sb on Si(001). A residual Sb coverage close to one monolayer at the sample surface has been determined for both of the preparation conditions.

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confidence: 86%

Surfactant mediated growth of MnSi1.7 on Si(001)

Teichert

Hortenbach

Hinneberg

2001

Applied Physics Letters

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“…However, in spite of encouraging results, the physical mechanism by which a surfactant modifies the Ge/Si growth mode remains unsolved, notably about the Sb effect since contradictory results (both theoretical and experimental) are reported in the literature. Indeed, while some results reveal crystallinity damages induced by Sb mediated growth [2,8] others show a decrease of the defect density [9]. In addition, Sb has also been shown to increase the surface and interface roughness [2,6,8,10,12] instead of promoting Ge epitaxy on Si [4,9,12,15,17,23].…”

Section: Introductionmentioning

confidence: 99%

Sb-surfactant mediated growth of Ge nanostructures

Portavoce

Ronda

Berbézier

2002

Materials Science and Engineering: B

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This paper reports the AFM and HREM study of the Sb surfactant mediated growth of Ge on Si(0 0 1). We show that very dense self-organised Ge dots of small lateral dimensions can be grown by using a sub-monolayer coverage of Sb on Si(0 0 1) in the transient growth regime between 2D nucleation and step flow. The dramatic Ge growth change induced by Sb is attributed to both kinetic and thermodynamic effects. Indeed, HREM observations evidence mainly two phenomena: the close-packing of ultra-small Ge islands indicating a lower surface diffusion in presence of Sb and a mono-modal island shape and size that strongly differs from the bimodal islands 'huts' and 'domes' commonly observed without Sb. Morphological and microstructural features of Ge islands formed with and without Sb are studied and the differences between facets and aspect ratio are exhibited. Moreover, at lower growth temperature (in the 2D nucleation regime, T g 0 350°C), a delay to 3D island nucleation is observed and defect free 2D flat layers can be grown up to thicknesses of 18 A ,. At higher growth temperature, (in pure step flow at T g 750°C) large, well separated 'dome' islands partially relaxed by dislocation nucleation on their edges are obtained. Such islands are very similar to those obtained without Sb coverage. The complete desorption of Sb on Ge rich surface at T\ 720°C explains this result. This study which improves the understanding on the formation of ultra-small dense islands is very promising for the fabrication of quantum devices that require highly homogeneous islands of small lateral sizes and of MOSFET heterostructures with strained SiGe n-channel which require flat Ge rich layers with abrupt interfaces.

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“…The RHEED-AES experiments were performed using an ultrahigh vacuum apparatus with a base pressure of 5x10 -11 Torr [13]. The incident energy and angle of a primary electron beam was 10 keV and ~1 o along the [2-1-10] azimuth.…”

Section: Methodsmentioning

confidence: 99%

Real-Time Monitoring of Oxidation on the Ti(0001) Surface by Synchrotron Radiation Photoelectron Spectroscopy and RHEED-AES

Mizuno¹

2003

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The oxidation kinetics on the Ti(0001) single crystal surface was investigated by real-time Auger electron spectroscopy combined with reflection high-energy electron diffraction (RHEED-AES) and high-resolution photoelectron spectroscopy using synchrotron radiation. The RHEED specular reflection spot intensity showed an oscillatory behavior, at the maxima and minima of which the oxygen uptake curve obtained by O KLL Auger electron intensity shows breaks. This agreement indicates that growth of oxides progresses with changing the surface morphology and the oxygen uptake rate. The O 2 dose dependence of Ti 2p photoelectron spectrum measured at photon energies of 574.6 eV (surface sensitive) and 1549 eV (bulk sensitive) revealed that (1) oxidation of metallic Ti atoms with growing Ti 2 O and TiO on the surface makes the surface morphology roughened up to ~17 L, (2) the roughened morphology is recovered by oxidation of Ti 2 O and TiO into Ti 2 O 3 , Ti 3 O 5 and TiO 2 up to ~45 L,

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RHEED-AES observation of Sb surface segregation during Sb-mediated Si MBE on Si(001)

Cited by 17 publications

References 0 publications

Surfactant mediated growth of MnSi1.7 on Si(001)

Surfactant mediated growth of MnSi1.7 on Si(001)

Sb-surfactant mediated growth of Ge nanostructures

Real-Time Monitoring of Oxidation on the Ti(0001) Surface by Synchrotron Radiation Photoelectron Spectroscopy and RHEED-AES

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