Real-time monitoring of the Si carbonization process by a combined method of reflection high-energy electron diffraction and Auger electron spectroscopy

Kosugi, Ryoji; Takakuwa, Yuji; Kim, Ki Seon; Abukawa, T.; Kono, S.

doi:10.1063/1.124230

Cited by 21 publications

(13 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Based on studies of the characteristic bulk-and surface-plasmon-loss features in the SiC thin film, they showed a surface aggregation from bulk Si on the top layer of the growing SiC film [95]. Their result is in good agreement with the photoelectron diffraction (PED) studies [5,26,[36][37][38][39][40]. Shimomura, et al [96] used STM and PED to study the ethylene-chemisorbed Si(100) surface without annealing during and after chemisorption.…”

Section: A Sic Particle Formationmentioning

confidence: 74%

“…In the case of the carbon-induced 2 × n reconstruction, based on XPD [5,26,[36][37][38][39][40], EELS [95] and temperatureprogrammed desorption (TPD) [94,102] studies revealed an absence of carbon atoms on the top layer after annealing. Consequently, we suppose in this paper that the 2×n structure model is composed solely of silicon atoms.…”

Section: B 2 × N Reconstructionmentioning

confidence: 99%

“…In the first stage carbonization of a Si(100) surface, 2 × n (6 ≤ n ≤ 12) [27,28] and c(4 × 4) [27][28][29][30][31][32][33][34][35][36][37][38][39][40][41][42][43] reconstructions have been reported. However, similar 2 × n [44][45][46][47][48][49][50][51][52][53][54][55][56][57][58] and c(4 × 4) reconstructions have been reported without carbonization.…”

Section: Introductionmentioning

confidence: 99%

“…However, similar 2 × n [44][45][46][47][48][49][50][51][52][53][54][55][56][57][58] and c(4 × 4) reconstructions have been reported without carbonization. It is noteworthy that X-ray photoelectron diffraction (XPD) studies [5,26,[36][37][38][39][40] have indicated an absence of carbon atoms on the outermost layer of the c(4 × 4) surface induced by carbon. Some investigators showed that carbon, including hydrocarbons and the impurities, plays a crucial role in surface reconstruction of 2×n [27,28] and c(4×4) [26, 29-42, 57, 76-78, 80, 81], though the carbon concentration on the surface is insufficient for carbon atoms to form a component of the c(4×4) structure [78].…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Initial-Stage Structural Change of Si(100) Surface Induced by Exposure to Ethylene Gas and Annealing

Takami¹,

Kusaka

Kusunoki

2006

e-J. Surf. Sci. Nanotech.

View full text Add to dashboard Cite

The initial stage of the structural change in a clean Si(100)-2 × 1 surface induced by annealing at 640• C and exposure to ethylene gas was studied by reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). The RHEED pattern included SiC spots and STM images revealed SiC particles on the surface, which confirmed the carbonization of the Si surface. At a different area of the same sample, the RHEED pattern showed both twice the periodicity of surface spots which indicates a flat surface region and transmitted bulk Si spots which indicates the initial stage of voids. The STM images of the flat region showed a 2 × n (6 ≤ n ≤ 12) reconstruction. The topography of the 2 × n STM image depended on the bias voltage. The 2 × n reconstruction was clearly induced by carbon impurities; STM images were similar to those in previous studies in which structures were formed by various kinds of impurities or contaminations.

show abstract

Section: A Sic Particle Formationmentioning

confidence: 74%

Section: B 2 × N Reconstructionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Initial-Stage Structural Change of Si(100) Surface Induced by Exposure to Ethylene Gas and Annealing

Takami¹,

Kusaka

Kusunoki

2006

e-J. Surf. Sci. Nanotech.

View full text Add to dashboard Cite

show abstract

“…Carbonization is a step to turn surface layer from Si to SiC by means of reaction with carbon supplied from gas source such as C 2 H 4 . 21 If formation of SiC layer by carbonization lags behind evaporation of silicon, voids will form at spots where silicon surface is free of SiC layer 4 or silicon atom can easily evaporate by penetration through SiC layer. Apart from void free, the interface of 3C-SiC/Si is quite smooth, as shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

A Facile Method for Heteroepitaxial Growth of Homogeneous 3C-SiC Thin Films on Both Surfaces of Suspended Si Wafer by Conventional Chemical Vapor Deposition

Liu

Guo

Shen

et al. 2016

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

Although epitaxial growth of Si films on both surfaces of silicon wafer (epi-Si/Si-wafer/epi-Si) can be realized in foundry by means of mounting certain amounts of silicon wafers in a boat in commercial specialized chemical vapor deposition equipment (s-CVD), for its counterpart epi-SiC/Si-wafer/epi-SiC, neither is it readily realized in s-CVD, nor is it easily achieved in conventional chemical vapor deposition equipment (c-CVD) which is generally used for growth of 3C-SiC on single surface of silicon wafer (epi-SiC/Si-wafer). Since the growth of epi-SiC/Si-wafer/epi-SiC in one run is more efficient, and is anticipated, in this work, we demonstrated a facile method for growth of epi-SiC/Si-wafer/epi-SiC in c-CVD. The Si wafer was double-side polished and mounted in a suspension mode on the susceptor in the c-CVD chamber. It was found that homogeneous 3C-SiC(100) films were heteroepitaxially grown on both surfaces of the suspended Si(100) wafer simultaneously. The structural and electrical properties of the obtained 3C-SiC films on both surfaces were investigated by means of SEM, XRD, Raman and J-V measurements. Results showed that each film was uniform and continuous, with same trend of slight degradation from the inner to the outer region of the wafer. This indicated a possible way of making mass production of high quality 3C-SiC films on Si wafers in one run in c-CVD for the potential applications such as sensors, with working principle based on voltage drop difference of two back-to-back diodes on epi-SiC/Si-wafer/epi-SiC, or graphene growth from epi-SiC/Si-wafer/epi-SiC templates.

show abstract

The Si(001)/C2H2 interaction to form a buffer layer for 3C-SiC growth

Goryachko

Yeromenko

Henkel

et al. 2004

phys. stat. sol. (a)

View full text Add to dashboard Cite

The intial stages of Si(001) interaction with C 2 H 2 were investigated with XPS and surface profilometry. The carbon enriched layer serves as a buffer between Si substrate and the 3C-SiC film aimed at growing on Si(001). Such parameters as substrate temperature and process duration come into a complicated interplay of C deposition, its reaction with Si and out-diffusion of the later from the substrate. Three distinct regimes, namely graphite dominated, carbide dominated and roughness dominated are found to result from this interplay.

show abstract

Real-time monitoring of the Si carbonization process by a combined method of reflection high-energy electron diffraction and Auger electron spectroscopy

Cited by 21 publications

References 15 publications

Initial-Stage Structural Change of Si(100) Surface Induced by Exposure to Ethylene Gas and Annealing

Initial-Stage Structural Change of Si(100) Surface Induced by Exposure to Ethylene Gas and Annealing

A Facile Method for Heteroepitaxial Growth of Homogeneous 3C-SiC Thin Films on Both Surfaces of Suspended Si Wafer by Conventional Chemical Vapor Deposition

The Si(001)/C2H2 interaction to form a buffer layer for 3C-SiC growth

Contact Info

Product

Resources

About