A Novel Driving Method for High-Performance Amorphous Silicon Gate Driver Circuits in Flat Panel Display Industry

Chiang, C. K.; Li, Yiming

doi:10.1109/jdt.2016.2561081

Cited by 8 publications

(4 citation statements)

References 13 publications

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“…The ESD research of TFTs starts from the amorphous Si material. TFTs based on a-Si:H have been used in the fields of display driver [75,76] and sensor [77,78] due to their low processing temperature (<350 °C) and good homogeneity in large-scale production. However, TFTs are very vulnerable to ESD stress because they are fabricated on glass substrates.…”

Section: Esd Research Of Amorphous Si Based Tftsmentioning

confidence: 99%

Reliability Issues of Thin Film Transistors Subject to Electrostatic Discharge Stresses: An Overview

Yan

Lan

Chen

et al. 2021

Adv Elect Materials

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Electrostatic discharge (ESD) is one of the most prevalent threats to the reliability of electronic components, which can result in a very high current passing through the device or microchip within a very short period of time, and cause serious irreversible damage. Thin film transistors (TFTs) are widely used in flat panel display, sensor, memristor, radio frequency identification, and other fields. But unlike the CMOS technology, TFTs can be fabricated in several various processes including amorphous Si, polycrystalline Si, metal oxide, organics, etc. As such, TFTs are prone to different types of reliability issues, and a unified overview on the subject would be beneficial to the electron devices community. The topic of the reliability issues of TFTs in different processes subject to ESD stresses has gained increasing attentions, but the reports and results are scattered. In the review, the existing articles on this topic are summarized. The characterization of TFTs under ESD stress is introduced and the failure mechanisms of various semiconductor based TFTs are compared and analyzed. Optimization methods to improve ESD robustness are presented. Finally, a conclusion and a perspective in the field of research on ESD reliability of TFTs are summarized.

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Section: Esd Research Of Amorphous Si Based Tftsmentioning

confidence: 99%

Reliability Issues of Thin Film Transistors Subject to Electrostatic Discharge Stresses: An Overview

Yan

Lan

Chen

et al. 2021

Adv Elect Materials

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“…Because the gate signals generally have only two kinds of states, high and low states, the integration of the gate circuit is simpler than that of the source circuit for satisfying performance requirements. Because the active-matrix display should be replaced by high-mobility Si-based ICs [16], [17], double-rate driving and triple-rate driving methods for LCDs have already been developed and applied to products in order to reduce the cost of the source ICs [18], [19].…”

Section: Integrated Gate Driver Circuit Designmentioning

confidence: 99%

Ultra-High-Image-Density, Large-Size Organic Light-Emitting Device Panels Based on Highly Reliable Gate Driver Circuits Integrated by Using InGaZnO Thin-Film Transistors

Shin¹,

Kim

2019

IEEE J. Electron Devices Soc.

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Large-size, organic light-emitting device (OLED) panels based on highly reliable gate driver circuits integrated using InGaZnO thin-film transistors (TFTs) were fabricated to achieve ultra-high image density (UHD). These large-size OLED panels were driven by using a novel gate driver circuit not only for displaying images but also for sensing TFT characteristics for external compensation. Regardless of the negative threshold voltage of the TFTs, the proposed gate driver circuit in OLED panels functioned precisely, resulting from a decrease in the leakage current. The falling time of the circuit is approximately 1.6 µs, which is fast enough to drive UHD OLED displays at 120 Hz. 120 Hz is most commonly used as the operating voltage because images consisting of 12 frames per second can be quickly shown on the display panel without any image sticking. The reliability tests showed that the lifetime of the proposed integrated gate driver is at least 1 × 10 5 h. INDEX TERMS Organic light-emitting devices, ultra-high-image density, large-size, gate driver, InGaZnO thin film transistor.

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“…Therefore, to prevent the widening of the channel of the driving TFT, several methods, including multi-level clock modulation, the use of a low-leakage pull-down structure, and capacitive coupling, have been developed to increase the driving capability of the gate driver and thereby improve the delay of the scan pulse. The voltage modulation [12], [13] accelerates the charging and discharging to the output node of the gate driver by using clock signals with multiple voltage levels. This method generates a driver IC of great complexity, increasing the cost of the display.…”

Section: Introductionmentioning

confidence: 99%

Low-Leakage Capacitive Coupling Structure for a-Si:H Gate Driver With Less Delay of Clock Signals Used in AMLCDs

Deng

Liao

Chen

et al. 2020

IEEE J. Electron Devices Soc.

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This work proposes a hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) gate driver with a low-leakage capacitive coupling structure to reduce the delay of the clock signal. The proposed circuit suppresses the fluctuation in the gate node of the driving TFT induced by clock-feedthrough effect, reducing the leakage current that flows from the clock signal line to the power source line with a low voltage level. This reduction in the leakage current can improve the degradation in the voltage of the clock signal and thus avoid the increase in the rising time of the scan pulse. Measurements for extracting the drain current versus gate-to-source voltage (I D-V GS) curves of a fabricated a-Si:H TFT are made to establish a simulation TFT model by fitting the obtained curves. For the same parameters of the TFTs and capacitances, the leakage current and the rising time of the output waveform of the proposed circuit are 45.45% and 21.36% lower, respectively, than those of previously developed gate driver. INDEX TERMS a-Si:H TFTs, capacitive-coupling effect, clock-feed-through effect, gate driver, leakage current.

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A Novel Driving Method for High-Performance Amorphous Silicon Gate Driver Circuits in Flat Panel Display Industry

Cited by 8 publications

References 13 publications

Reliability Issues of Thin Film Transistors Subject to Electrostatic Discharge Stresses: An Overview

Reliability Issues of Thin Film Transistors Subject to Electrostatic Discharge Stresses: An Overview

Ultra-High-Image-Density, Large-Size Organic Light-Emitting Device Panels Based on Highly Reliable Gate Driver Circuits Integrated by Using InGaZnO Thin-Film Transistors

Low-Leakage Capacitive Coupling Structure for a-Si:H Gate Driver With Less Delay of Clock Signals Used in AMLCDs

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