Reliability Issues of Thin Film Transistors Subject to Electrostatic Discharge Stresses: An Overview

Yan, Yan; Lan, Wenrui; Chen, Yuankang; Yang, Dongbu; Zhou, Ye; Zhu, Zhihua; Liou, Juin J.

doi:10.1002/aelm.202100886

Cited by 10 publications

(2 citation statements)

References 101 publications

(100 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Like other semiconducting films, IEHV stress changes the electrical properties of perovskite devices. [25,26] Owing to the short exposure time to IEHV, there is no color change in the perovskite film. This implies that the origin of degradation from IEHV might not be attributed to the bandgap change of the perovskite film or burned layer induced by Joule heating.…”

Section: Effect Of Iehv On the Photovoltaic Performance Of Pscsmentioning

confidence: 99%

Electrically Reliable Perovskite Photovoltaic Cells Against Instantaneous Kilovolt Stress

Park

Byeon

Jang³

et al. 2022

Advanced Energy Materials

View full text Add to dashboard Cite

facilitates the full potential of photovoltaic devices (PVs), whose record efficiency exceeds 29%. [4] In addition, developing the PSCs' roll-to-roll process allows us to fabricate large-area PSCs at low costs. [5] Consequently, PSCs can compete with other PV technologies in the market regarding device performance and manufacturing cost. However, almost all PVs are installed in harsh outdoor conditions where the temperature and humidity vary throughout the year; their reliability also plays a vital role in determining their levelized cost of electricity. Despite the importance of reliability, the inherent poor stability of PSCs makes it difficult for them to fulfill commercialization standards. The short lifetimes of PSCs are mainly attributed to the poor chemical stabilities of the perovskite and buffer layers. Intensive studies have been conducted to prevent perovskite films from reacting with oxygen and moisture, including encapsulation, [6] novel device structures, [7] and buffer engineering. [8] Last of all, several groups suggested general design rules for stable PSCs. [9] Nevertheless, the large-sized, perovskite PV-based energy harvesting system, consisting of parallel and series-connected PSCs, will face other stabilization issues as its size increases to obtain an appropriate voltage and current. Mechanical stress resistance, [10] the fireproofing of PSCs, [11] and stability against electrical stress [12] should be considered. Significantly, the reliability of PSCs against electrical stress becomes a more critical factor because they are supposed to connect a power grid. FromThe electrical stability of perovskite solar cells (PSCs) will play an essential role in their commercialization because field-installed PSCs frequently operate under non-ideal voltages. Particularly, an instantaneous extremely high voltage (IEHVs) from electro-static discharge will be applied to PSCs due to friction in roll-to-roll processes. In addition, lightning strikes and surges from grids are plausible sources of IEHVs to field-installed PSCs. Hence, the effect of IEHVs on PSCs is systematically investigated and a robust device structure is suggested. An IEHV severely deteriorates PSCs by destroying their diode characteristics. Physical and chemical damage from IEHVs to the interface between the perovskite film and buffer layers causes increased recombination losses and series resistance. To reinforce the heterointerface, a well-known surface defect passivation method is adopted, adding excessive PbI 2 to perovskite films. The excessive PbI 2 , mainly located at the interface, successfully protects PSCs from IEHV. Moreover, inserting well-established defect passivation layers, C 60 , and phenethylammonium iodide into the interface of a perovskite film improves the device's stability against IEHV. Therefore, interface defect passivation is viable for stable PSCs against abnormal electrical stress. It is believed that this study will provide fundamental insights for designing electrically reliable PSCs, which is crucial for...

show abstract

Section: Effect Of Iehv On the Photovoltaic Performance Of Pscsmentioning

confidence: 99%

Electrically Reliable Perovskite Photovoltaic Cells Against Instantaneous Kilovolt Stress

Park

Byeon

Jang³

et al. 2022

Advanced Energy Materials

View full text Add to dashboard Cite

show abstract

“…Oxide thin-film transistors (TFTs) have recently attracted substantial attention owing to their excellent performance, good compatibility, and feasibility for flexible electronics applications [1][2][3]. These advantages make oxide TFTs widely used in fields of advanced displays and low-cost integrated circuits (ICs) [4].…”

Section: Introductionmentioning

confidence: 99%

P‐1.1: Co‐sputtering‐deposited Hf‐doped ITO Thin Films for Thin Film Transistors Application

Xie

Zhao

et al. 2022

Symp Digest of Tech Papers

View full text Add to dashboard Cite

Oxide thin film transistors (TFTs) attract much attention in fields of advanced displays and low-cost integrated circuits (ICs). In this work, hafnium doped InSnO (Hf-ITO) thin films are deposited by co-sputtering process, and are applied as the active layer to TFTs. Notably, the Hf-ITO TFTs exhibit excellent device performance, preferable uniformity, and good gate-bias-stress stability. Major electrical parameters of the Hf-ITO TFTs include a field-effect mobility (µFE) of 7.46 cm 2 V -1 s -1 , a turn-on voltage (VON) of 1.10 V, a sub-threshold swing (SS) of 341.18 mV/decade, and an on/off state current ratio (ION/IOFF) over 10 5 . Our work proposes a novel method for developing high-mobility semiconductor oxide films and oxide TFTs.

show abstract

Laboratory investigations of triboelectric charging of dust by rover wheels

Yeo

Wang

Dove

et al. 2023

Advances in Space Research

View full text Add to dashboard Cite

Reliability Issues of Thin Film Transistors Subject to Electrostatic Discharge Stresses: An Overview

Cited by 10 publications

References 101 publications

Electrically Reliable Perovskite Photovoltaic Cells Against Instantaneous Kilovolt Stress

Electrically Reliable Perovskite Photovoltaic Cells Against Instantaneous Kilovolt Stress

P‐1.1: Co‐sputtering‐deposited Hf‐doped ITO Thin Films for Thin Film Transistors Application

Laboratory investigations of triboelectric charging of dust by rover wheels

Contact Info

Product

Resources

About