This paper describes the electrical characterization of the van der Waals interfaces formed between indium-tin oxide (ITO) and a liquid metal-based microelectrode. We examined the influence of the adventitious contamination of the ITO surface by airborne molecular contaminants on the electrical transport across an ITO-based van der Waals interface. We constructed large-area junctions of the form ITO//Ga 2 O 3 /EGaIn, where EGaIn is a liquid eutectic gallium-indium alloy covered with a self-passivating thin oxide film (Ga 2 O 3 of ∼ 0.7 nm), and "//" denotes the van der Waals interface formed between the ITO and EGaIn electrodes. Comparisons of the current density data for junctions formed with ITO surfaces prepared via five different surface cleaning methods-utilizing UV light, ozone and/or organic solvent (ethanol)-indicated that the electrical conductance of the ITO//Ga 2 O 3 van der Waals interface was significantly enhanced (by three orders of magnitude) by UV/ozone surface cleaning, based on comparisons of the median value of the log-current density, and the dispersion of the data was significantly narrowed. The results reported in this work show that the electrical characterization of surfaces using the EGaIn-based microelectrode is an attractive method for investigating the electrical behavior of a conducting surface and the molecular adsorption phenomena on it.Thin films of indium-tin oxide (ITO) have received significant attention as optically transparent (∼90% transmittance in the visible wavelength range), electrically conducting (∼10 4 S/cm) electrodes in a variety of optoelectronic devices including solar cells, organic lightemitting devices (OLEDs), and liquid-crystal displays (LCDs). 1-5 In fabricating molecular and organic electronics with ITO thin-film electrodes, van der Waals (vdW) interfaces are often formed between the ITO surface and a molecular layer or another electrode. Understanding the electrical characteristics of such vdW interfaces and the influence of adventitious contamination on their properties is an important issue for improving the performance of molecular electronic devices. This information, however, remains elusive due to the experimental difficulties in generating vdW interfaces with high reproducibility and accessibility, and in measuring their electrical conductance in a statistically significant way, without the complexities that arise from a top-electrode such as ill-defined contacts and contact areas, airborne contamination on its surface, and the irreproducibility of its electrical behavior.This paper describes the formation and electrical characterization of junctions of the form ITO//Ga 2 O 3 /EGaIn, where EGaIn is eutectic gallium indium alloy that is covered with a self-passivating oxide film (Ga 2 O 3 of ∼0.7 nm), 6-9 and "//" denotes the vdW interface generated from the contact between the two electrodes. This type of junction allows the convenient generation of ITO-based vdW interfaces, their electrical characterization, and an examination of the relationship b...