A novel FET model including an illumination intensity parameter for simulation of optically controlled millimeter-wave oscillators

Kawasaki, Shigeo; Shiomi, Hiroya; Matsugatani, Kazuoki

doi:10.1109/22.681206

Cited by 19 publications

(7 citation statements)

References 9 publications

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“…Direct illumination is carried out from the top of the device using a semiconductor laser with λ = 820 nm and a spot diameter of 10 µm. Figure 2 shows representative I-V curves for the dark and illuminated device for V gs = 0.2 V. These curves are compared to experimental data as well as values obtained using the equivalent circuit model presented in Kawasaki et al (1998). The figure shows that the I-V characteristics obtained by the various approaches are in a close agreement.…”

Section: Results and Analysismentioning

confidence: 57%

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Optoelectronic conversion of short pulses in sub-micrometer GaAs active devices

Alsunaidi

2008

Opt Quant Electron

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The accelerating integration of microwave and optical components in modern optoelectronic systems stimulates comprehensive investigations of device operation and efficiency. This paper studies the optoelectronic conversion capabilities of sub-micron GaAs active devices in response to ultra-short illumination pulses. The physical phenomena involved in the photo-electronic effects are appropriately accounted for using a physical device model based on the solution of the Boltzmann's transport equations. The study targets important optical performance indicators including terminal photocurrent peak value and switching time. A figure-of-merit is defined to quantify the overall response. Results show that operating and geometrical conditions can play important roles in the device design, operation and optimization process.

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Section: Results and Analysismentioning

confidence: 57%

“…The experimental set-up is similar to that used in Kawasaki et al (1998). Figure 1 shows the structure of the GaAs-based device under study.…”

Section: Results and Analysismentioning

confidence: 99%

Optoelectronic conversion of short pulses in sub-micrometer GaAs active devices

Alsunaidi

2008

Opt Quant Electron

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“…Since the MMIC oscillator operates at 23.1 GHz as described above, the S parameters were measured under an applied bias by using a network analyzer and a database was created. In this way, the FET model parameters assuming the Statz model were extracted and were then entered into the circuit simulator of the entire AIA [12,13]. The simulation results are shown in Fig.…”

Section: Aia Arraymentioning

confidence: 99%

Hybrid active integrated antenna arrays with a 23‐GHz MMIC oscillator

Kawasaki

Yasuoka

Sasaki

2003

Electron. Comm. Jpn. Pt. I

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SUMMARYAn ultrasmall active integrated antenna 2.5 cm square was fabricated by combining an MMIC oscillator and planar slot antennas. The design of array antennas by simulation and analysis of their injection locking characteristics are presented. Beam steering and the effect of packaging are considered in the measurement, and the effect of the metal reflector plate behind the array antenna is studied. A small active integrated antenna is placed at the focal point of a parabolic antenna. Its operation as a receiving integrated antenna with a self-oscillating mixer for communication satellite is confirmed.

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“…Calandra [3] has modeled the DC response and demonstrated the differences between light-induced effects and bias-shift-related ones, either direct or indirect. Kawasaki [4] has modeled the DC and RF responses, including new elements in the equivalent circuit which are functions of optical power, for the simulation of the optical characteristics of microwave and millimeter-wave integrated circuits. Our group has shown the importance of nonlinear characteriza-tion of transistors from pulsed measurements, with [5] and without laser illumination [6].…”

Section: Introductionmentioning

confidence: 99%