Optoelectronic conversion of short pulses in sub-micrometer GaAs active devices

Abstract

The accelerating integration of microwave and optical components in modern optoelectronic systems stimulates comprehensive investigations of device operation and efficiency. This paper studies the optoelectronic conversion capabilities of sub-micron GaAs active devices in response to ultra-short illumination pulses. The physical phenomena involved in the photo-electronic effects are appropriately accounted for using a physical device model based on the solution of the Boltzmann's transport equations. The study targets important optical performance indicators including terminal photocurrent peak value and switching time. A figure-of-merit is defined to quantify the overall response. Results show that operating and geometrical conditions can play important roles in the device design, operation and optimization process.

A first-principles study of transport properties of a gallium arsenide nanoribbon-based molecular device

“…Gallium arsenide (GaAs) is one of the important materials used in nanoelectronic and optoelectronic devices. Due to its high carrier mobility, small dielectric constant, high temperature resistance and direct band gap GaAs is widely used in optoelectronic devices [11,12]. Different nanostructures of GaAs can be synthesized by metal organic vapor phase epitaxy (MOVPE) [13,14] and molecular beam epitaxy [15,16].…”