A novel frequency independent third-order intermodulation distortion cancellation technique for BJT amplifiers

Heijden, Mark P. van der; Graaff, H.C. de; Vreede, L.C.N. de

doi:10.1109/bipol.2001.957882

Cited by 6 publications

(11 citation statements)

References 6 publications

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“…To utilize the ROT, the bias point should be selected from the middle of the load line. The given formula has restrictions about its use, it is not applicable to amplifiers that are optimized for high linearity such as given in [5] and [6].…”

Section: B Relation Of Oip3 and DC Operating Pointmentioning

confidence: 98%

OIP3 estimation based on DC power conditions

Duchon

Kangas

Lunden

2010

2010 10th Mediterranean Microwave Symposium

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To estimate OIP3 of low power RF amplifiers from DC power operating conditions is of a good help at the beginning of the design work. We introduce a simple formula intended for estimation of OIP3 of Bipolar Junctions Transistors. Harmonic balance simulations and measurements were carried out to validate usability of this formula. The results show that there is more relation between OIP3 and the collector current than between OIP3 and the collector emitter-voltage. The proposed formula is applicable for collector currents in the range of 2 mA to 8 mA and for collector-emitter voltages in the range of 2 V to 3 V.

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Section: B Relation Of Oip3 and DC Operating Pointmentioning

confidence: 98%

OIP3 estimation based on DC power conditions

Duchon

Kangas

Lunden

2010

2010 10th Mediterranean Microwave Symposium

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“…In the 2000s, number of investigations on the RF Wideband Amplifier was several times more than the previous decades [46–100, 101–152]. Furthermore, it became widespread to use the phrase ‘wideband LNA’ for transistorised RF wideband low‐noise amplifiers [50, 52, 53, 55–64, 66–68, 71–93, …”

Section: Uwb Lnamentioning

confidence: 99%

“…New topologies such as ‘distortion cancellation’ and ‘Noise Cancellation’ were discussed for wideband RF amplifiers in this decade [52, 56, 91, 92, 120, 122, 136]; however, they usually had higher power dissipation, lower gain or narrower bandwidth than [85, 88, 104]. Study of [56, 120] reveals how engineers succeeded to cancel noise and distortion simultaneously in a system, with their trade‐offs.…”

Section: Uwb Lnamentioning

confidence: 99%

Ultrawideband LNA 1960–2019: Review

Shahrabadi

2021

IET Circuits, Devices & Syst

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To the best of the author's knowledge, several studies during 1960-2019 were carried out on wideband and ultrawideband LNAs just to render optimum LNAs for SAW-less Radio-Frequency Integrated Circuits (RFICs) but none of these works reviewed and taught the proceedings of these six decades, hence the lack of a comprehensive review is quite noticeable. This article specifically studies the challenges and solutions of designing UWB LNA by reviewing topologies and techniques such as inductive peaking, noise and distortion cancellation, g m -boosting, active inductor and notch filter. Its historical aspect illustrates when the idea of wideband LNA was born and how it changed to ultrawideband LNA, and its tutorial aspect discusses circuits and achievements to present optimum LNAs in Complementary MOS (CMOS), BiCMOS and High-Electron-Mobility Transistor (HEMT) technologies. This work describes the endeavours of engineers in reaching UWB LNA from narrowband LNA during six decades that have great importance as a chapter in understanding this topic because it teaches all topologies, techniques, circuits and related events in a historical narrative for trained readers who are not experts on this topic. | UWB LNA | In the 1960sWhere did the idea of 'transistorised wideband LNA' originate from? It seems that everything goes back to the 1960s when This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

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“…6). To highlight the degrading effects of the variation with frequency on the device linearity when using wideband-modulated signals, we consider the out-of-band linearization technique for a bipolar device [3], [9].…”

Section: B Bandwidth Consideration For Modulated Signalsmentioning

confidence: 99%

“…By controlling the BB and second-harmonic terminations at the input and output of the device, the magnitude and phase of these indirect components can be adjusted. Consequently, the indirect IM3 components can be used, under some specific conditions, to cancel the direct ones [3]. This method can provide excellent linearity over a large power range up to the compression point [8].…”

Section: Out-of-band Cancellation Techniquementioning

confidence: 99%

Active Harmonic Load–Pull for On-Wafer Out-of-Band Device Linearity Optimization

Spirito

Pelk

Rijs³

et al. 2006

IEEE Trans. Microwave Theory Techn.

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In this paper, we present an active harmonic load-pull system especially developed for the on-wafer linearity characterization/optimization of active devices with wideband modulated signals using the out-of-band linearization technique. Our setup provides independent control of the impedances at the baseband, fundamental, and second-harmonic frequencies presented to the input and output of the device under test. Furthermore, to enable realistic test conditions with wideband-modulated signals, the electrical delays in the load-pull system are kept as small as possible by implementing a novel loop architecture with in-phase quadrature modulators. We have achieved a phase variation of the reflection coefficient of only 5 MHz for both the fundamental and second-harmonic frequencies.We demonstrate the high potential of the system for the on-wafer evaluation of new technology generations by applying out-of-band linearization to heterojunction bipolar transistor (HBT) and laterally diffused metal-oxide-semiconductor (LDMOS) devices. For the HBT, we outline a game plan to obtain the optimum efficiency-linearity tradeoff. Finally, a record-high efficiency-linearity tradeoff was achieved (without digital predistortion) for an inverse class-AB operated Philips Gen 6 LDMOS device, yielding 44% efficiency at an adjacent channel power level of 45 dBc at 2.14 GHz for an IS-95 signal.

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A novel frequency independent third-order intermodulation distortion cancellation technique for BJT amplifiers

Cited by 6 publications

References 6 publications

OIP3 estimation based on DC power conditions

OIP3 estimation based on DC power conditions

Ultrawideband LNA 1960–2019: Review

Active Harmonic Load–Pull for On-Wafer Out-of-Band Device Linearity Optimization

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