A Novel High-Frequency Bipolar Pulsed Power Generator for Biological Applications

Zeng, Weirong; Yu, Liang; Dong, Shoulong; Ma, Jianhao; Wang, Yilin; He, Yingjiang; Wang, Xiaoyu; Yao, Chenguo

doi:10.1109/tpel.2020.2994333

Cited by 48 publications

(10 citation statements)

References 24 publications

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“…The lower is the resistance R t . As a result, the shorter is the T fu according to formula (2). As shown in formula (5), the collector current I c should also be lower than I m to avoid the transistor's breakdown.…”

Section: Transistor Selectionmentioning

confidence: 99%

“…NOWadays, pulse generators have been widely used in applications including food sterilisation [1], biomedicine [2], plasma physics [3,4], and industry [5]. The research shows that rise/ fall time of high-voltage pulses has a great influence on experimental results, such as the surface potential of material treatment [6], mean electron energy of plasma in parallel-plate capacitive coupled plasma source [7], and ionisation rate distribution in atmospheric pressure plasma jets [8].…”

Section: Introductionmentioning

confidence: 99%

“…Especially when we need to adjust the gate currents for many switches operating at difficult potentials. Delayed triggering method has been widely used to adjust rise/fall time of pulses in solid-state pulse generators [18][19][20][21][22]. In these cases, all discharge switches which usually operate synchronously are now divided into different groups and are triggered group by group.…”

Section: Introductionmentioning

confidence: 99%

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A high‐voltage solid‐state Marx generator with adjustable pulse edges

et al. 2023

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Most reactors for non‐thermal plasma excitation are capacitive to pulse generators. The density and temperature of electrons in plasma are dominated by the discharging currents which are proportional to the pulse edges. However, adjusting the pulse edges is quite challenging since the switching speed and the inductance and capacitance in the discharging loops dominate them. This study proposes a drive circuit for solid‐state Marx generators with adjustable edges. The drive circuit controls the Miller plateau by adjusting the gate voltage amplitude to adjust both the rise time and fall time of pulses continuously and independently. The influence of the gate voltage on the Miller plateau and the rise time is studied. The feasibility is verified by both simulating and experimental results. An 8‐stage solid‐state Marx generator prototype was built, and 4.8‐kV pulses with a rise time in the range of 79 ns‐22.21 μs were obtained over capacitive loads. Adjusting pulse edges can control the current amplitudes in dielectric barrier discharge loads.

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Section: Transistor Selectionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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A high‐voltage solid‐state Marx generator with adjustable pulse edges

et al. 2023

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“…An S 2 M 3 comprises a Marx circuit, drivers, a control system, a step-down converter, and an optical fiber communication interface. In the n-stage solid-state Marx circuit topology, high-voltage diodes replace the traditional rechargeable inductors so that the output voltage is not boosted during discharge [32] Each stage of the M 3 CD cell consists of a high-voltage diode D i , a storage capacitor C i , and a half-bridge structure composed of a charging switch S bi and a discharging switch S ai . When all the charging switches S bi are triggered to switch on, the DC power supply charges all the capacitors in parallel to the specified voltage U C through diode D i , as shown by the blue arrow.…”

Section: The Structure Of a Stackable S 2 Mmentioning

confidence: 99%

A Flexible Solid-State Marx Modulator Module Based on Discrete Magnetic Coupling Drivers

Chen,

Zhu,

Zheng

et al. 2023

Electronics

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With the increasing and deepening application of high-voltage nanosecond solid-state pulse generators in biological, industrial, and environmental fields, the development of existing pulse generators faces many challenges, such as fixed pulse shapes, the usage of isolated driver power supplies, lower power density, and limited output electrical performance. Hence, a novel high-frequency multilevel nanosecond modular solid-state Marx modulator (SSMM) based on discrete magnetic coupling gate drivers is proposed. The gate voltage of the two MOSFETs can be rapidly synchronized at a high repetition frequency to achieve an amplitude-controlled gate voltage within 100 ns. The feasibility of the driver was verified by PSpice simulation and prototype testing. Moreover, a stackable SSMM module (S2M3) structure is proposed to solve the problem of common-mode interference conducted through the driver, which improves the reusability, scalability, and redundancy of modulators. The characteristic parameters of the developed 14-stage S2M3 are as follows: an output voltage amplitude of 5.45 kV with a 100 ns–50 ms width, a minimum rise time of approximately 18 ns, and a continuous repetition frequency of 100 kHz. S2M3 has the ability to change the pulse shape, and the pulse frequency can reach 2.8 MHz within the burst.

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“…Introduction: Ultra-wideband (UWB) microwave generation with ultrahigh repetition frequency (MHz) is essential for through-wall imaging, radar communications, ultrasound pulse applications, 3D imaging systems, and high-power microwave sources [1][2][3][4][5][6][7]. The use of PCSSs in solid-state microwave generation techniques has piqued interest in applications such as ultra-wideband and high power microwave (HPM) generators.…”

mentioning

confidence: 99%

4H‐SiC photoconductive semiconductor based ultra‐wideband microwave generation with MHz tunable repetition rate

Chu

Xun

Wang

et al. 2022

Electronics Letters

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Use of the vanadium-compensated semi-insulating (VCSI) 4H-SiC photoconductive semiconductor switch (PCSS) for the generation of an ultra-wideband (UWB) microwave with MHz tunable re-frequency is demonstrated. To evaluate the impact of device architectures on performance, a 4H-SiC-based photoconductive semiconductor switch was manufactured and was evaluated using a laser cluster driver with a configurable optical pulse re-frequency. The 1.5 mm-thick 4H-SiC PCSS was found to operate with an electric field up to 20 kV and a photocurrent of 20.7 A. The fabricated ultra-wideband microwave system could generate ultrahigh repetition frequency pulses from 0.5 to 2.0 MHz. Simulation of the UWB antenna system was carried out to examine the radiation field. The peak radiation electric-field factor (rE) of a singleunit UWB microwave generation system can reach 17 kV.

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A Novel High-Frequency Bipolar Pulsed Power Generator for Biological Applications

Cited by 48 publications

References 24 publications

A high‐voltage solid‐state Marx generator with adjustable pulse edges

A high‐voltage solid‐state Marx generator with adjustable pulse edges

A Flexible Solid-State Marx Modulator Module Based on Discrete Magnetic Coupling Drivers

4H‐SiC photoconductive semiconductor based ultra‐wideband microwave generation with MHz tunable repetition rate

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