A novel high performance SiGe channel heterostructure dynamic threshold pMOSFET (HDTMOS)

Abstract

In this letter, we propose a novel SiGe channel heterostructure dynamic threshold metal oxide semiconductor (DTMOS) and demonstrate its superiority over conventional Si-DTMOS. The introduction of a SiGe layer for the channel is very effective for reducing the threshold voltage in spite of keeping impurity doping level at the body region. Therefore, a low threshold voltage and a large body effect factor can be achieved simultaneously. The SiGe HDTMOS with highly doped body exhibits 2 times higher transconductance, 1.4 times higher saturation current, and better short channel immunity than that of the control Si-DTMOS with lightly doped body of which threshold voltage is nearly the same.Index Terms-, body effect factor, DTMOS, parasitic channel, short channel effect, SiGe.

Low-frequency noise characteristics in SiGe channel heterostructure dynamic threshold pMOSFET (HDTMOS)

“…Although the SiGe-HDTMOS exhibits higher drive current owing to the higher hole mobility and the large body effect factor [7], its SId is still better than that of the Si-DTMOS. Moreover, the Sv8 of the SiGe-HDTMOS is much reduced to ahout one-seventh compared with the Si-DTMOS.…”

“…novel Si-based MOSFETs, such as Si dynamic threshold-voltage MOS (Si-DTMOS) and SiGe heterostructure MOS (SiGe-HMOs), have been proposed and their noise characteristics have been reported by several researchers[l]- [6]. In the previous work, we have proposed the SiGe heterostructure dynamic threshold-voltage MOSFET (SiGe-HDTMOS) and demonstrated its superior DC characteristics for low-voltageilow-power applications [7]. In this study, we have firstly examined low-frequency noise characteristics of the SiGe-HDTMOS which provided the higher g,.…”

A Novel Low-Voltage N-Channel Heterostructure Dynamic Threshold Voltage MOSFET (N-HDTMOS) With p-Type Doped SiGe Body

“…In the previous letter, in order to reduce and enhance , we proposed a strained SiGe channel heterostructure pDTMOS (P-HDTMOS) and demonstrated its superior dc characteristics over the conventional Si DTMOS [3]. In the SiGe P-HDTMOS, the SiGe channel layer creates a valence band offset, and can be reduced.…”

Dynamic threshold mode operation of p-channel Si and strained-SiGe MOSFETs between 10 K and 300 K

“…A topic related to low power applications of MOSFETs is dynamic threshold (DT)-mode operation, which has been shown to reduce the sub-threshold slope to its theoretical minimum in Si MOSFETs [5,6]. Few investigations have been done on DT-mode operation in strained-Si (s-Si) MOSFETs [6] and strained-SiGe (s-SiGe) [7,8], and none can be found on the operation of both Si and s-SiGe MOSFETs in DT mode over a wide temperature range. In this letter we report on the DT-mode operation of both p-channel Si and s-SiGe MOSFETs, processed under the same conditions, for temperatures ranging from T = 300 K to T = 10 K.…”