Abstract:A novel high-voltage trench gate insulated gate bipolar transistor with diffusion remnant (DR) layer (DR-IGBT) is proposed in this letter. The DR layer in the emitter side which is formed by grinding after ultra-deep N + diffusion helps to stored the carrier and improves the on-state voltage drop (V ce(SAT) ). The DR-IGBT has a better trade-off between the breakdown voltage (BV) and V ce(SAT) than the carrier stored trench bipolar transistor (CSTBT). The doping profile of diffusion remnant layer makes the junc… Show more
Set email alert for when this publication receives citations?
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.