A Novel HM-HD-RFET Biosensor for Label-Free Biomolecule Detection

Abstract

The mortality of people worldwide caused by COVID-19 has enhanced the research interest to design and develop power-efficient, low-cost, and sensitive biosensors to detect a wide range of biomolecules or foreign particles that can cause severe negative impact on humans. A novel Bio-RFET biosensor with hetero-material (HM) for source/channel and drain regions and hetero-dielectric (HD) is proposed, which acts as an n -MOSFET or a p -MOSFET and n -TFET or p -TFET. This HM-HD-RFET biosensor senses the biomolecules by the label-free dielectric modulation (DM) technique. When the biomolecules are present in the nanocavity, the biosensor can detect the biomolecules without labeling costs. It also changes the dielectric polarization within the nanocavities, and causes a drain current variation in the presence of an electric field. In this research article, (SiO 2 + TiO 2 ) and an AlGaAs/Ge-based HD-HM-RFET have been analyzed for their use in biosensing. We found that the proposed device exhibits higher sensitivity as compared to a SiO 2 + HfO 2 -HM-RFET and a Si-based SiO 2 + TiO 2 -RFET for varying dielectric constants ( K ) from K = 20–80 and charge densities in the range − 5 × 10 11 to 1 × 10 13 C/cm 2 . Further, it can be noticed that n -SiO 2 + TiO 2 -HM-TFET possesses the highest I d -V gs sensitivity of 5.09 × 10 13 , I ON /I OFF ratio of 1.23 × 10 9 , lowest SS of 20.3 mV/dec, and V th of 1.48 V.

A Novel Single Gate Controlled Nonvolatile Floating Program Gate Reconfigurable FET

“…[3][4][5][6][7] Therefore, many researches on RFET have been carried out, including theoretical modeling, [8] materials and manufacturing related reports, [9] and expanded applications such as biosensors. [10] However, comparing to CMOS technology, the extra PG of RFET increases the complexity and difficulty of metal interconnection, and if the control gate (CG) is reversely biased, energy band bending between PG and CG will be enhanced and band to band tunneling (BTBT) effect happens and leakage current is formed and power consumption will be increased. For RFET with extremely DOI: 10.1002/adts.202200823 integration, the band bending between CG and PG will be largely enhanced.…”