A Novel Infrared Sige/Si Heterojunction Detector with an Ultrathin Phosphorus Barrier Grown by Atomic Layer Deposition

Abstract

In strained Sia−xGex heterojunction internal photoemission (HIP) photodiodes the spectral response can be tailored over a wide wavelength range by varying the Ge content. In this paper heavily in situ boron doped SiGe layers with 30% Ge were grown by low pressure rapid thermal chemical vapour deposition (LP(RT)CVD). The detectors exhibit a cut-off wavelength of 8.5 μm. A delta-like P peak, incorporated by atomic layer deposition technique, shifts the cut-off to shorter wavelengths. This shift is related to an increase of the barrier height at the SiGe/Si interface caused by the narrow n+-doped layer in agreement with device simulation. In this way the trade off between critical film thickness for high Ge content film growth and absorption depth for proper detector response can be overcome.

Atomically Controlled Processing for Group IV Semiconductors by Chemical Vapor Deposition

“…1). Based on the investigation of surface reaction processes, the concept of atomic layer process control 3,6,7,[9][10][11] has been demonstrated for high-performance Si 0:65 Ge 0:35 -channel p-type MOS fieldeffect transistors (pMOSFETs) with a 0.12 mm gate length by utilizing in-situ impurity-doped Si 1Àx Ge x selective epitaxy on the source/drain regions at 550 C, 12) for ultrathin P barriers in infrared SiGe/Si heterojunction internal photoemission detectors, 13) and for B and P base doping in npn and pnp hetero-bipolar transistors (HBTs). [14][15][16] In this review, we describe ultraclean low-temperature low-pressure CVD processing using SiH 4 and GeH 4 gases.…”

Atomically Controlled Technology for Future Si-Based Devices

“…Figure 1 summarizes the capabilities of atomic layer processing for the fabrication of ultrasmall and nanodevices. Based on the investigation of surface reaction processes, the concept of atomic layer process control [4] has been demonstrated for high performance Si 0.65 Ge 0.35 channel pMOSFETs with a 0.12 m gate length by utilizing in-situ impurity-doped Si 1-x Ge x selective epitaxy on the source/drain regions at 550 o C [7], for ultrathin P barriers in infrared SiGe/Si heterojunction internal photoemission (HIP) detectors [8], and for B base doping in HBTs [9]. Additionally, in in-situ doped Si 1-x Ge x epitaxial growth on the (100) surface in a SiH 4 -GeH 4 -dopant (PH 3 , or B 2 H 6 or SiH 3 CH 3 )-H 2 gas mixture, the deposition rate, the Ge fraction and the dopant concentration has been expressed quantitatively by modified Langmuir-type rate equation.…”