2005
DOI: 10.1557/proc-0891-ee06-03
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A Novel InSb Photodiode Infrared Sensor Operating at Room Temperature

Abstract: A microchip-sized InSb photodiode based infrared sensor (InSb PDS) that operates at room temperature was developed. The InSb PDS consists of 700 photodiodes connected in series and consumes no power, because it works in photovoltaic mode to output an open-circuit voltage. The InSb PDS has a typical responsivity of 1,900 V/W and an output noise of 0.15 μV/Hz1/2. A detectivity of 2.8×108 cmHz1/2/W was obtained at 300 K. The InSb PDS has performance high enough for applications such as mobile electronic equipment… Show more

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Cited by 6 publications
(5 citation statements)
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“…We believe that this mode can use the effects of R 0 improvement by a barrier layer most efficiently, as the open circuit voltage is proportional to the R 0 value of the photodiode. 30) R 0 is the averaged value of the resistance, obtained by applying a voltage of AE0:01 V to the photodiode. The photocurrent I ph was calculated by using the equation I ph ¼ V out =R 0 .…”
Section: Methodsmentioning
confidence: 99%
“…We believe that this mode can use the effects of R 0 improvement by a barrier layer most efficiently, as the open circuit voltage is proportional to the R 0 value of the photodiode. 30) R 0 is the averaged value of the resistance, obtained by applying a voltage of AE0:01 V to the photodiode. The photocurrent I ph was calculated by using the equation I ph ¼ V out =R 0 .…”
Section: Methodsmentioning
confidence: 99%
“…1(a). This structure is similar to that which has been developed for the InSb photodiode [2]. It was grown on a semi-insulating GaAs (0 0 1) substrate by a Riber MBE-49 system.…”
Section: Methodsmentioning
confidence: 99%
“…An InSb photodiode of mid-infrared sensor operating at room temperature was developed previously by authors [1][2][3][4][5][6]. Meanwhile, several uncooled InSb LEDs have been reported [7,8].…”
Section: Introductionmentioning
confidence: 99%
“…(9)(10) This result is supposed to be mainly due to the decrease in the rate of current diffusion to the p-InSb layer of excited electrons in the conduction band, which also increases the resistance under near-zero bias condition. Figure 2 shows the dark I-V curve of a photodiode with 9 × 9 μm 2 junction area measured at a temperature of 300 K. Note the good rectifying characteristics even at room temperature.…”
Section: Sensor Structurementioning
confidence: 99%