A Novel Isolation Scheme featuring Cavities in the Collector for a High-Speed 0.13μm SiGe:C BiCMOS Technology

Choi, L.J.; Huylenbroeck, Stefaan Van; Donkers, J.J.T.M.; Noort, W.D. van; Piontek, A.; Sibaja-Hernandez, A.; Meunier-Beillard, P.; Neuilly, F.; Kunnen, E.; Leray, Philippe; Vleugels, F.; Venegas, Rafael; Hijzen, E.A.; Decoutere, Stefaan

doi:10.1109/smic.2007.322805

Cited by 6 publications

(1 citation statement)

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“…This allows the creation of cavities in bulk silicon. This can, for example, be used in a BiCMOS process to reduce the extrinsic base-collector capacitance, as is demonstrated in [8] and [9]. An illustration of an HBT with these cavities is shown in Figure 5.…”

Section: Sige As a Sacrificial Materialsmentioning

confidence: 99%

The Versatile Use of SiGe for High-Performance Devices

Hijzen¹,

Donkers²,

Meunier-Beillard³

et al. 2008

ECS Trans.

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Apart from the widely used bandgap engineering in the base of Hetero-junction Bipolar Transistors (HBTs) and strain engineering in CMOS SiGe has many other possible application in Si technology. This paper will discuss several examples, both within and outside (Bi)CMOS technology. For instance, SiGe bandgap engineering can be used in power diodes. Other possibilities make use of the fact that SiGe can be etched selectively towards Si. This allows, for example, creation of cavities in the silicon substrate. These can be used for, e.g., reduction of parasitic capacitance, device isolation, or electric field shaping. IntroductionThe ever increasing speed requirements for, primarily, wireless applications has so-far been the main driver of the SiGe epitaxy research. This has resulted in processes with good manufacturability that are routinely used in high-performance BiCMOS processes. The development has always been driven by the need to create thin base layers with a different band-gap than the emitter (e.g. [1]). Over time also different applications of SiGe epitaxy have emerged. The one which is probably being explored most at the moment is the use for strain engineering for mobility enhancement in MOS transistors. The properties of SiGe are, however, also interesting for many more applications. The band-gap engineering aspect, for instance, can also be used to enhance switching diode performance, as will be shown below. Another interesting application makes use of the possibility to reduce carrier lifetime with SiGe, which can be used in emitters of HBTs to reduce the current gain, and hence increase breakdown voltage. Then there is the interesting property of SiGe that it can be used as a sacrificial material, because of the possibility to etch it selectively with respect to silicon. This allows micromachining in the front-end of an IC process. Some applications of this technology are also discussed in this paper.

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Section: Sige As a Sacrificial Materialsmentioning

confidence: 99%