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A 200GHz F, SiGe:C HBT has been integrated into a 0.13pm BiCMOS technology. A previous generation low complexity quasi selfaligned arcbiteeture (QSA) is scaled down both in a lateral and vertical way. Lateral suing is obtained by using present-day step and scan tools. Vertical sizing is achieved by reducing the thermal budget of the active module and by an aggressive scaling of the SiGe:C base epitaxial Layer. A deep trench module featuring a thick oxide Liner has been developed. Excellent DC parameters and peak FUFmax values of 200/160GHz are demonstrated. The CMOS device characteristics remain unchanged by applying low thermal budget processing in the bipolar module.

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