A Novel Lateral Power MOSFET with Ultra-low Energy Consumption and Extraordinary Robustness

Cheng, Junji; Zhong, Tao; Yi, Bo; Huang, Haimeng; Ma, Keqiang; Guo, Xin; Yang, Huajun; Wang, Zhiming; Zhang, Guoyi

doi:10.1109/ispsd57135.2023.10147729

Cited by 1 publication

(1 citation statement)

References 21 publications

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“…These charges emit electric field lines to p-GaN and result in an intense electric field there. By contrast, in the HEMT with CP layer (CP-HEMT), the electric field at the gate edge could be reduced due to the effect of HK [18]. According to the theory of dielectric physics, when the dielectric is under the action of external electric field, the positive and negative charge centres in a unit cell will be separated and form an electric dipole.…”

Section: Structure and Principlementioning

confidence: 99%

Study on a p-GaN HEMT with composite passivation and composite barrier layers

Cheng,

Wang,

Liu

et al. 2024

Semicond. Sci. Technol.

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A novel structure of p-GaN high-electron-mobility transistor (HEMT) is proposed and studied. It features two composite layers. One is the composite passivation (CP) layer consisting of Si3N4 and high-permittivity (HK) film. The other is a composite barrier (CB) layer consisting of Al x Ga1−x N/AlN/Al0.23Ga0.77N. Due to the coordinated effect of CP and CB, the specific on-resistance (R ON, SP) can be reduced under the premise of ensuring breakdown voltage (BV). Meanwhile, since the HK film in CP introduces a mechanism to automatically compensate the hot electrons trapped by surface states, the current collapse effect could be suppressed. According to the simulation results, in comparison with the conventional p-GaN HEMT, the proposed one using TiO2 as the HK material and using Al-component of 0.35 for Al x Ga1−x N gains a 29.5% reduction in R ON, SP while getting a 9.8% increase in BV, which contributes to a 50.5% decrease in the energy loss during one cycle at 200 kHz. It is also demonstrated by the simulation results that the current collapse in the proposed device is reduced by 28.6%. Thereby, a promising p-GaN HEMT with improved performance and reliability is invented.

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Section: Structure and Principlementioning

confidence: 99%