A Novel Method for Dimensional Loss Characterization

Abstract

The present tendency toward devices scaling i n VLSI technology makes more and more dificult the electrical characterization of channel dimenrions. The narrow channel effects have had a great consideration for what concern device modeling, but a minor attention about dimensional loss problems. The aim of this work is to propoJe an effective width characterization method based on transconductance and not affected by the typical problems related to narrow channel devices. Moreover, a compared analysis of this method to an other one previously proposed [ I ] i3 shown pointing out the phenomenological differences.

The physics of the stripe quantum critical point in the superconducting cuprates

“…In this framework one can also investigate the bilayer structure of Bi2212 and explain the puz-zling absence of bonding-antibonding band splitting. According to the band calculations [8], we introduced [9] a k-dependent interplane hopping t ⊥ (k) = t ⊥ |γ k | with γ k = 1 2 (cos k x − cos k y ). t ⊥ (k) is large near the M points only.…”