A novel method for the experimental determination of the coupling ratios in submicron EPROM and flash EEPROM cells

Bez, R.; Camerlenghi, E.; Cantarelli, D.; Ravazzi, L.; Crisenza, G.

doi:10.1109/iedm.1990.237217

Cited by 27 publications

(4 citation statements)

References 3 publications

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“…4) The transconductance in SR is given by (11) where increases with in the FG transistor in contrast to the conventional transistor, where is relatively independent of the drain voltage in the saturation region.…”

Section: B Fg Devicementioning

confidence: 99%

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Flash memory cells-an overview

et al. 1997

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Section: B Fg Devicementioning

confidence: 99%

“…By comparing the results, the coupling coefficient can be determined. Other methods have been proposed to extract coupling coefficients directly from the memory cell without using a "dummy" one, but they need a more complex extraction procedure [11]- [13].…”

Section: B Fg Devicementioning

confidence: 99%

Flash memory cells-an overview

et al. 1997

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“…Next, by measuring the cells at different etching times, we can obtain the relationship between SCR and program/erase performance. [22][23][24][25] As shown in Figs. 7(a) and 7(b), a higher SCR can result in a more efficient program/erase performance as we predicted in the previous section.…”

Section: Application To Voltage Reductionmentioning

confidence: 99%

New Triple Self-Aligned (SA3) Split-Gate Flash Cell with T-Shaped Source Coupling

Sung¹,

Lei²,

Huang

et al. 2005

Jpn. J. Appl. Phys.

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A new triple self-aligned (SA3) split-gate flash cell with a T-shaped source coupling approach is described in this paper. This novel structure can significantly enhance coupling capacitance between the source and floating gate without increasing cell size. The enhancement can be simply modulated by an oxide-etching step. This new structure can be applied to program voltage reduction and cell size scaling. For program voltage reduction, the maximum program voltage of the new cell can be reduced from 7.4 to 6.4 V, which is characterized by a newly developed methodology for program vs disturb window characterization. For cell size scaling, comparable sort-1 and sort-2 yields are demonstrated using the new cell with a shorter floating length and a shallower source junction. To understand the relationship between source coupling ratio (SCR) and the program/erase mechanism, an insightful discussion on the program and erase mechanisms for our split-gate flash cell is also shown in this paper.

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“…The capability to extract a g and further predicting the erase characteristics with small dimension changes is thus important in the early development stage for these high density flash cells. Several methods for extracting coupling ratios have been reported in the literatures [1][2][3][4]. Some of them require the fabrication of the Ôdummy cellÕ with a direct contact to the floating gate.…”

Section: Introductionmentioning

confidence: 99%