“…Silicon carbide (SiC) is an essential material with extraordinary characteristics such as high thermal stability, chemical inertness, corrosion resistance, and semiconducting behavior. [1,2] These properties have allowed for the use of SiC in oxidation and corrosion-resistant coatings, [3,4] transistors for harsh environments, [5] field emitters, [6] catalyst supports, [7] sensors, [8] membranes, [9] and photocatalysis, among others [10,11] SiC is most commonly produced via three routes: chemical vapor deposition (CVD), [12] reaction between carbon and silicon precursor, [13,14] and pyrolysis of preceramic polymers (PCPs). [15,16] CVD produces lowdefect SiC, but the method is expensive and not easily scalable.…”