2021
DOI: 10.1016/j.ijrmhm.2021.105596
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A novel method of silicon carbide coating to protect porous carbon against oxidation

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Cited by 8 publications
(3 citation statements)
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“…Ceramic coatings generally lead to enhancing the high-temperature stability of carbon materials in the air atmosphere due to their high melting point, outstanding thermal shock stability, and excellent antioxidant properties. 31 Therefore, thermogravimetry (TG) was operated under an air condition to investigate the high-temperature resistance of coated samples. As can be seen from Figure 3d and Figure S7, the TG curves start to deviate from 100% at 643 C for the original SG, 680 C for SG@SiC-1, and 738 C for SG@SiC-2.…”
Section: Resultsmentioning
confidence: 99%
“…Ceramic coatings generally lead to enhancing the high-temperature stability of carbon materials in the air atmosphere due to their high melting point, outstanding thermal shock stability, and excellent antioxidant properties. 31 Therefore, thermogravimetry (TG) was operated under an air condition to investigate the high-temperature resistance of coated samples. As can be seen from Figure 3d and Figure S7, the TG curves start to deviate from 100% at 643 C for the original SG, 680 C for SG@SiC-1, and 738 C for SG@SiC-2.…”
Section: Resultsmentioning
confidence: 99%
“…Silicon carbide (SiC) is an essential material with extraordinary characteristics such as high thermal stability, chemical inertness, corrosion resistance, and semiconducting behavior. [ 1,2 ] These properties have allowed for the use of SiC in oxidation and corrosion‐resistant coatings, [ 3,4 ] transistors for harsh environments, [ 5 ] field emitters, [ 6 ] catalyst supports, [ 7 ] sensors, [ 8 ] membranes, [ 9 ] and photocatalysis, among others [ 10,11 ]…”
Section: Introductionmentioning
confidence: 99%
“…Silicon carbide (SiC) is an essential material with extraordinary characteristics such as high thermal stability, chemical inertness, corrosion resistance, and semiconducting behavior. [1,2] These properties have allowed for the use of SiC in oxidation and corrosion-resistant coatings, [3,4] transistors for harsh environments, [5] field emitters, [6] catalyst supports, [7] sensors, [8] membranes, [9] and photocatalysis, among others [10,11] SiC is most commonly produced via three routes: chemical vapor deposition (CVD), [12] reaction between carbon and silicon precursor, [13,14] and pyrolysis of preceramic polymers (PCPs). [15,16] CVD produces lowdefect SiC, but the method is expensive and not easily scalable.…”
Section: Introductionmentioning
confidence: 99%