A novel MOCVD reactor for growth of high-quality GaN-related LED layers

Hu, Shouxing; Liu, Sheng; Zhang, Zhi; Yan, Han; Gan, Zhiyin; Fang, Haisheng

doi:10.1016/j.jcrysgro.2014.12.038

Cited by 29 publications

(14 citation statements)

References 12 publications

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“…inlet. Moreover, it makes the close-distance gas inlet feasible, such as in the form of a showerhead-type gas inlet, which is widely deployed, because of its low precursor premature reaction characteristics [35][36][37][38]. To quantify the heating due to the coupling, the heating power on the susceptor and the gas inlet of Design A and Design B were calculated and the results are shown in Fig.…”

Section: Heating Efficiencymentioning

confidence: 99%

Induction-heating MOCVD reactor with significantly improved heating efficiency and reduced harmful magnetic coupling

Sun

Lin

et al. 2018

Journal of Crystal Growth

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Section: Heating Efficiencymentioning

confidence: 99%

Induction-heating MOCVD reactor with significantly improved heating efficiency and reduced harmful magnetic coupling

Sun

Lin

et al. 2018

Journal of Crystal Growth

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“…Nitrides are epitaxially grown by a low pressure 36×2” MOCVD reactor on two‐inch c ‐plane sapphire substrates as presented in our previous study . It is a novel buffered distributed‐spray (BDS) reactor with vertical and horizontal gas sprayers to improve species, velocity and temperature uniformities at the inlets.…”

Section: Experiments and Measurement Facilitiesmentioning

confidence: 99%

“…In the following analysis, the three zones, Zones A to C, are also called as the center zone, the middle zone and the edge zone, respectively. The luminous wavelength and intensity as well as the thickness of the films are measured by room‐temperature photoluminescence mapping (RPMBlue, Nanometrics company) in different modes , in which a 405‐ nm laser is used as the excitation source. The luminescence lights from the samples are focused by the collection lenses.…”

Section: Experiments and Measurement Facilitiesmentioning

confidence: 99%

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Uniformity investigation of MOCVD‐grown LED layers

Jiang

Yan

Liu

et al. 2015

Crystal Research and Technology

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Doped or undoped gallium nitride compounds (GaN/InGaN), usually grown by metal‐organic chemical vapor deposition (MOCVD) method, are at the heart of blue and green light emitting diodes (LEDs). Growth uniformities, such as the excited wavelength, luminous intensity and film thickness, critically influence their application in LED devices. In this paper, growth of GaN compounds in a MOCVD reactor, capable of a one‐time production of 36 × 2” wafers of nitrides, has been investigated. To examine growth uniformity across the wafer and from wafer to wafer, the reactor is divided into Zone A, Zone B and Zone C according to distance to the center of the graphite susceptor. Comparative analysis of each zone offers a straightforward view of the mean excitation wavelength, luminous intensity, film thickness and their standard deviations. Conformity of the growth uniformity in each zone is further checked comprehensively through averaging across‐wafer and wafer‐to‐wafer variables and their standard deviations. Zone B is found to retain excellent wavelength uniformity, since it is located at the middle of the susceptor with weaker effects of the susceptor edge and of the inlet gas flow. Zone A, at the center of the reactor, has the best mean intensity and thickness uniformities due to a well control of the infrared temperature measurement during the growth. And Zone C is worst in all uniformities and should be the main focus when optimizing the reactor. The above experimental analysis reveals the principles common to the MOCVD technique, and provides a basic for further optimization of the process window to improve the cycles with considerable reduction of the costs.

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“…Özellikle, Katkılı / katkısız Galyum Nitrat (GaN) geniş spektral aralıkta çalışma özelliğine sahip olmasının yanında yüksek elektrik iletkenliği nedeniyle III-V yarı iletkenlere kıyasla yaygın olarak kullanılmaktadır [1,2]. Heteroepitaksiyal büyütmelerde, GaN bazlı ışık yayan diyot (LED) katmanları esas olarak metal-organik kimyasal Buhar biriktirme tarafından sentezlenir [3,4]. Ancak, GaN ve farklı alttaşlar arasındaki termal genleşme katsayısı ve mismatch yüksek kaliteli filmlerin elde edilmesini engeller [5][6][7].…”

Section: Introductionunclassified

InGaN/GaN LED Yapıların Mozaik Yapı Analizi

Durukan

Öztürk

Özçelik

et al. 2018

European Journal of Science and Technology

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Bu çalışmada, MOCVD yöntemi ile üretilen InGaN/GaN ışık yayan diyot (LED) yapılarının mozaik yapıları analiz edildi. Safir alttaş üzerine biriktirilen, farklı In kompozisyonuna sahip InGaN/GaN bariyer tabakasının mozaik yapı üzerine etkisi Yüksek Çözünürlü X Işını Kırınımı (HR-XRD) yöntemi ile karakterize edildi. Amacımız mozaik yapı hesaplarından yararlanarak LED yapısının kalitesini arttırmaktır. Günümüzde LED' lerin geniş bir kullanım alanına sahip olmasından dolayı sektörde büyük bir pazar payı bulunmaktadır. Özellikle InGaN gibi, GaN bazlı LED' ler arsenik bazlı LED' lerden daha yüksek güç, sıcaklık ve frekans aralıklarında çalışabilirler. Ancak GaN tabanlı LED' ler hala yüksek kusur yoğunluklarına sahiptir. Bu nedenle çalışmalarımızda mozaik yapı analizi yapıldı. Hesaplamalarımızda Vegard ve William Hall yarı deneysel metotları kullanıldı. Kompozisyonun, kenar ve vida türü kusurların azalmasına yol açan önemli bir faktör olduğunu söyleyebiliriz.

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A novel MOCVD reactor for growth of high-quality GaN-related LED layers

Cited by 29 publications

References 12 publications

Induction-heating MOCVD reactor with significantly improved heating efficiency and reduced harmful magnetic coupling

Induction-heating MOCVD reactor with significantly improved heating efficiency and reduced harmful magnetic coupling

Uniformity investigation of MOCVD‐grown LED layers

InGaN/GaN LED Yapıların Mozaik Yapı Analizi

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