A novel Multi - Nitridation ONO interpoly dielectric (MN-ONO) for highly reliable and high performance NAND Flash memory

Oxidation characteristics of silicon exposed to O(1D2) and O(3P2) radicals and stress-relaxation oxidation model for O(1D2) radicals

“…Oxidation processes utilizing oxygen radicals have been studied as low-thermal-budget processes. Some researchers have reported low interface trap densities in SiO 2 [1][2][3] and GeO 2 4,5) films and improved chemical vapor deposition SiO 2 films [6][7][8][9][10][11][12] by performing post-radical oxidation at low temperatures. Several methods have been proposed for generating oxygen radicals, including the thermal dissociation of ozone [13][14][15][16] and nitrogen monoxide 17) and the generation of a remote plasma in a rare gas/O 2 gas atmosphere.…”