A novel “multi-tube” vapour growth system and its application to the growth of bulk crystals of cadmium telluride

Hetero-epitaxial crystal growth of CdTe on GaAs substrates

“…The multi-tube physical vapour transport (MTPVT), which was designed for rapid crystal growth (4100 mm/h), has been under development in Durham for some years [5]. Although primarily a bulk crystal growth system, the MTPVT system has been used to investigate the epitaxy of thick CdTe films on GaAs substrates of different orientations, and culminating in the growth of crystals several mm thick.…”

Characterization of point defects in CdTe by positron annihilation spectroscopy

“…11 The crystals had approximately 1 ppm excess of Te and were low resistivity (<1 Â 10 5 Xcm). 12 Measurements were performed with positron sources supported on 8 lm Kapton using conventional fast-fast coincidence spectrometers, 13 and the instrument resolution functions (IRF) were obtained from measurements on directly deposited aluminum before and after the sample measurements.…”

Twinning in vapour-grown, large volume Cd1−Zn Te crystals

“…Details of the growth system can be found in reference [16]. Samples were cut as rectangular prisms, the longest faces being parallel to ) 1 1 0 ( and ) 11 1 ( planes in the un-twinned material (Fig.…”

“…However, past attempts at vapour growth have been frustrated by the inability to control independently the source and seed temperatures, and the transport rate. We have successfully grown CdTe [14] and CZT crystals [15,11] up to 100mm diameter on GaAs substrates, using a multi-tube physical vapour transport (MTPVT) technique [16,17]. The key feature of the growth system is that the temperatures of source and seed are thermally decoupled by use of independent vertical furnaces which are parallel, separated horizontally and interconnected by a horizontal, heated, transport tube to avoid any line of sight, and thus radiative thermal coupling, between source and seed.…”