A Novel One-Transistor Active Pixel Sensor With In-Situ Photoelectron Sensing in 22 nm FD-SOI Technology

Optimization of Photoelectron In-Situ Sensing Device in FD-SOI

“…Experimental confirmation of the mechanism is shown in Fig. 1(c), which compares the evolution of ID after a VBG = -5 V pulse (at t = 2 ms) in the dark and under illumination with  = 520 nm light at 20 μW/cm 2 intensity turned on between 4 and 9 ms [11]. The purpose of this work is to study the impact of specific parameters on the device performance and provide guidance for further optimization.…”

“…This negative charge increases the VTH and reduces the drain current of the N-type channel through the interface coupling effect, shown in Fig. 1(b), providing a highly sensitive detection mechanism [11] in a single compact device. Experimental confirmation of the mechanism is shown in Fig.…”

“…Conversely, the standard CMOS image sensor combines a photodiode with other transistors to realize random access, photodetection, and other functions, but suffers from a complicated cell structure [9] . To overcome these problems, we have proposed a 1T-APS, named the photoelectron in-situ sensing device (PISD) [10], and demonstrated it experimentally in a 22 nm FD-SOI technology [11]. The PISD integrates photo sensing, charge integration, buffer amplification, and random access in a 1T device without charge transfer or additional transistors.…”

“…The outstanding performance of the PISD originates from its innovative operation principle [11], but it also depends on the device design. This work is dedicated to systematically studying the impact of various design parameters on the device performance.…”

A Review on the Recent Progress of Silicon‐on‐Insulator‐Based Photodetectors

“…b) Evolution of I D under various light intensities and pulse durations.c) Relationship between V out and exposure dose. Adapted with permission [71]. Copyright 2019, IEEE.…”