2013
DOI: 10.1109/ted.2013.2271053
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A Novel p-i-n Inductor for Tunable Wideband Matching Network Application

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Cited by 14 publications
(9 citation statements)
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References 23 publications
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“…From the data, we can observe that the proposed impedance matcher has a good performance in terms of stability and impedance matching, with the added benefit of the miniaturised size. [10] diode + + + 0.2-1 Easy [11] pin inductor --- [12] transistor + + + 0.4-10 Easy [13,14] RF…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…From the data, we can observe that the proposed impedance matcher has a good performance in terms of stability and impedance matching, with the added benefit of the miniaturised size. [10] diode + + + 0.2-1 Easy [11] pin inductor --- [12] transistor + + + 0.4-10 Easy [13,14] RF…”
Section: Resultsmentioning
confidence: 99%
“…Then, aluminium electroplating is used to increase the thickness of the previous layer, and therefore originating the bridge with the desired thickness. (11): removing the photoresist that served as a support for the bridge's deposition -from this step results a bridge suspended above transmission lines that is supported by nickel columns.…”
Section: Fabrication Processmentioning
confidence: 99%
“…Because the fixtured devices used are small in [18] and the operating frequency is low in [19], the open-short method is still valid in our previous research. However, the characterization for large-sized DUTs at high frequencies is necessary especially in the areas of high-power and high-frequency device modeling.…”
Section: Introductionmentioning
confidence: 96%
“…Our previous research was devoted to the small-signal model parameter extraction of MOSFETs in the breakdown regime [18] and the characterization of a wideband tunable matching network up to 10 GHz [19] based on a open-short deembedding method. Because the fixtured devices used are small in [18] and the operating frequency is low in [19], the open-short method is still valid in our previous research.…”
Section: Introductionmentioning
confidence: 99%
“…Other works about silicon devices focused on p–n junction mixed breakdown characterization and MOSFET breakdown modeling . This concept was applied to the implementation of a wideband tunable matching network suitable for RF PA applications . In this article, a RF direct down‐conversion Doppler radar system comprising a low power PA with the power management technique has been realized, and experimental verification of this radar system considering simultaneous switching noise has been conducted.…”
Section: Introductionmentioning
confidence: 99%