A Novel Self-Aligned Etch-Stopper Structure With Lower Photo Leakage for AMLCD and Sensor Applications

Liang, Chung-Yu; Gan, Fengyuan; Liu, Po–Tsun; Yeh, F. S.; Chen, S.H.-L.; Chang, Ting‐Chang

doi:10.1109/led.2006.886418

Cited by 14 publications

(5 citation statements)

References 8 publications

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“…In addition, many studies have attempted to minimize the photocurrent by various processes such as amorphous silicon (R-Si:H) back channel etching, Ar plasma treatment of the back surface, a bottom-gated metal light shield, and a self-aligned etch-stopper sidewall contact. 9,10 Nanowires of wide band gap oxides such as ZnO, SnO transparency and can be processed at low temperatures. However, their characteristic response to light, which is helpful in photosensor applications, is a disadvantage in transistor applications for the reasons described above.…”

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confidence: 99%

“…These issues, in turn, could cause unstable picture quality and device operation, and therefore, a black matrix containing chromium (Cr) or carbon organic material is generally used as a color filter in thin film transistor liquid crystal displays to reduce the undesired effect of external light sources. In addition, many studies have attempted to minimize the photocurrent by various processes such as amorphous silicon (α-Si:H) back channel etching, Ar plasma treatment of the back surface, a bottom-gated metal light shield, and a self-aligned etch-stopper sidewall contact. , …”

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confidence: 99%

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Photostable Zn₂SnO₄ Nanowire Transistors for Transparent Displays

et al. 2012

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Although oxide nanowires offer advantages for next-generation transparent display applications, they are also one of the most challenging materials for this purpose. Exposure of semiconducting channel areas of oxide nanowire transistors produces an undesirable increase in the photocurrent, which may result in unstable device operation. In this study, we have developed a Zn(2)SnO(4) nanowire transistor that operates stably regardless of changes in the external illumination. In particular, after exposure to a light source of 2100 lx, the threshold voltage (V(th)) showed a negative shift of less than 0.4 V, and the subthreshold slope (SS) changed by ∼0.1 V/dec. ZnO or SnO(2) nanowire transistors, in contrast, showed 1.5-2.0 V negative shift in V(th) and an SS change of ∼0.3 V/dec under the same conditions. Furthermore, the Zn(2)SnO(4) nanowire transistors returned to their initial state immediately after the light source was turned off, unlike those using the other two nanowires. Thus, Zn(2)SnO(4) nanowires achieve photostability without the application of a black material or additional processing, minimizing the photocurrent effect for display devices.

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Photostable Zn₂SnO₄ Nanowire Transistors for Transparent Displays

et al. 2012

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“…In general, one of the structures is selected and used depending on the application or the fabrication-process condition. [22][23][24] In this study, the top-gate, bottom-contact structure in Fig. 2(d) was chosen and effects of calendering were investigated.…”

Section: Introductionmentioning

confidence: 99%

Application of calendering for improving the electrical characteristics of a printed top-gate, bottom-contact organic thin film transistors

Lee

Jung

et al. 2018

Jpn. J. Appl. Phys.

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Interface between the channel and the gate dielectric of organic thin film transistors (OTFTs) needs to be smoothed in order to improve the electrical characteristics. In this study, an optimized calendering process was proposed to improve the surface roughness of the channel. Top-gate, bottom-contact structural p-type OTFT samples were fabricated using roll-to-roll gravure printing (source/drain, channel), spin coating (gate dielectric), and inkjet printing (gate electrode). The calendering process was optimized using the grey-based Taguchi method. The channel surface roughness and electrical characteristics of calendered and non-calendered samples were measured and compared. As a result, the average improvement in the surface roughness of the calendered samples was 26.61%. The average on-off ratio and field-effect mobility of the calendered samples were 3.574 ' 10 4 and 0.1113 cm 2 V %1 s %1 , respectively, which correspond to the improvements of 16.72 and 10.20%, respectively.

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“…However, because of the backlight, a large off-region leakage current due to the optical generation of electron-hole pairs can flow through the channel of the LTPS TFT. The off-region leakage current, which affects the gray scale and the flicker phenomenon of LCD panels, should be minimized [2,3]. Therefore, to prevent an effect of the backlight on the TFT, a light shield (LS) metal is placed under the active layer of the TFT [4].…”

Section: Introductionmentioning

confidence: 99%

The effect of a source-contacted light shield on the electrical characteristics of an LTPS TFT

Kim

Sun

Kang³

et al. 2017

Semicond. Sci. Technol.

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The electrical characteristics of a low-temperature polycrystalline silicon thin-film transistor (TFT) with a source-contacted light shield (SCLS) are observed and analyzed. Compared with that of a conventional TFT without a light shield (LS), the on-current of the TFT with an SCLS is lower because the SCLS blocks the fringing electric field from the drain to the active layer. Furthermore, the gate-to-source capacitance (C gs ) of the TFT with an SCLS in the off and saturation regions is higher than that of a conventional TFT, which is due to the gate-to-LS capacitance (C g-LS ). The electrical characteristics of the TFT with an SCLS are thoroughly investigated by two-dimensional device simulations, and a semi-empirical C g-LS model for SPICE simulation is proposed and verified.

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A Novel Self-Aligned Etch-Stopper Structure With Lower Photo Leakage for AMLCD and Sensor Applications

Cited by 14 publications

References 8 publications

Photostable Zn₂SnO₄ Nanowire Transistors for Transparent Displays

Photostable Zn₂SnO₄ Nanowire Transistors for Transparent Displays

Application of calendering for improving the electrical characteristics of a printed top-gate, bottom-contact organic thin film transistors

The effect of a source-contacted light shield on the electrical characteristics of an LTPS TFT

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A Novel Self-Aligned Etch-Stopper Structure With Lower Photo Leakage for AMLCD and Sensor Applications

Cited by 14 publications

References 8 publications

Photostable Zn2SnO4 Nanowire Transistors for Transparent Displays

Photostable Zn2SnO4 Nanowire Transistors for Transparent Displays

Application of calendering for improving the electrical characteristics of a printed top-gate, bottom-contact organic thin film transistors

The effect of a source-contacted light shield on the electrical characteristics of an LTPS TFT

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Product

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Photostable Zn₂SnO₄ Nanowire Transistors for Transparent Displays

Photostable Zn₂SnO₄ Nanowire Transistors for Transparent Displays